Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Gan Grown on Ain/Sapphire Templates

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

Optimization of Epitaxial Structures on GaN-on-Si(111) HEMTs with Step-Graded AlGaN Buffer Layer and AlGaN Back Barrier

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer

High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition

Improved Characteristics of (11 2‾2) Plane AlGaN Films Grown on SiNx Interlayer

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)