Abstract:Recently, crack-free GaN-on-Si growth technology has become increasingly important due to the high demand for power semiconductor devices with high performances. In this paper, we have experimentally optimized the buffer structures such as the AlN nucleation layer and step-graded AlGaN layer for AlGaN/GaN HEMTs on Si (111) substrate by varying growth conditions and thickness, which is very crucial for achieving crack-free GaN-on-Si epitaxial growth. Moreover, an AlGaN back barrier was inserted to reduce the buffer trapping effects, resulting in the enhancement of carrier confinement and suppression of current dispersion. Firstly, the AlN nucleation layer was optimized with a thickness of 285 nm, providing the smoothest surface confirmed by SEM image. On the AlN nucleation layer, four step-graded AlGaN layers were sequentially grown by increasing the Al composition from undermost layer to uppermost layer, meaning that the undermost one was close to AlN, and the uppermost was close to GaN, to reduce the stress and strain in the epitaxial layer gradually. It was also verified that the thicker step-graded AlGaN buffer layer is suitable for better crystalline quality and surface morphology and lower buffer leakage current, as expected. On these optimized buffer structures, the AlGaN back barrier was introduced, and the effects of the back barrier were clearly observed in the device characteristics of the AlGaN/GaN HEMTs on Si (111) substrate such as the transfer characteristics, output characteristics and pulsed I-V characteristics.

What problem does this paper attempt to address?

This paper attempts to address the challenge of growing high-quality, crack-free GaN-based high electron mobility transistors (HEMTs) on Si (111) substrates. Specifically, the authors aim to reduce defects and stress, and improve device performance by optimizing the buffer layer structure, such as the AlN nucleation layer and step-graded AlGaN buffer layer, and by introducing an AlGaN back-barrier layer. The main issues addressed in the paper are as follows: 1. **Reducing defects and stress caused by lattice mismatch and thermal expansion coefficient differences**: - Due to the lattice mismatch (17%) and thermal expansion coefficient difference (54%) between GaN and Si (111), a large number of dislocations and stress are introduced when growing GaN on Si substrates, leading to severe trap effects and scattering. - The authors reduce these defects and stress by inserting a thick buffer layer. 2. **Optimizing the buffer layer structure**: - By optimizing the thickness of the AlN nucleation layer to ensure a smooth surface and prevent Si-Ga meltback etching. - By growing a step-graded AlGaN buffer layer to gradually reduce stress and strain. - By adjusting the thickness and composition of the buffer layer to improve crystal quality and surface morphology, and reduce buffer layer leakage current. 3. **Introducing an AlGaN back-barrier layer**: - By introducing an AlGaN back-barrier layer to reduce buffer layer trap effects, enhance carrier confinement, and suppress current dispersion. - By optimizing the thickness and Al composition of the back-barrier layer to improve device characteristics, such as transfer characteristics, output characteristics, and pulsed I-V characteristics. 4. **Improving device performance**: - By implementing the above optimization measures to improve the DC characteristics and pulsed I-V characteristics of HEMTs, significantly enhancing the dynamic on-resistance (R_on). In summary, this paper aims to address the key issues in growing high-quality GaN-based HEMTs on Si (111) substrates by optimizing the buffer layer structure and introducing a back-barrier layer, thereby improving device reliability and performance.

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