Abstract:Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on β-gallium oxide (β-Ga 2 O 3 ) wafers with various back barrier (BB) materials have garnered considerable attention, mainly due to the superior sheet charge density achieved by the confinement of a large number of electrons in the quantum well, which improves RF performance even further. This work investigates the role of different BB materials of Fe-doped AlGaN buffer AlN/GaN HEMTs on β-Ga 2 O 3 wafers (substrate) with gate–source ( L GS ) and gate–drain ( L GD ) distances of 0.4 μm and 1.2 μm, respectively. When compared to traditional substrates such as silicon carbide and silicon, a β-Ga 2 O 3 substrate is more affordable, is accessible in large wafer sizes, and has a lower lattice mismatch (0.4–2.4%) with AlGaN alloys. The effects of gate length scaling (Lg = 50 nm, 100 nm, and 150 nm) on the proposed HEMT devices were also analysed. The short-channel effects can be mitigated by introducing BB structures, which helps avoid further scaling of the barrier layer. With a p-diamond BB of 100 nm thickness, an Fe-doped AlGaN buffer rectangular gated AlN/GaN HEMT Lg = 50 nm results in maximum I D of 5.23 A/mm, g m of 1723 mS/mm, and f T of 361.6 GHz. This superior DC/RF performance can be achieved due to the large confinement of charge carriers into the quantum well and the low leakage current achieved by introducing BB structures and Fe-doped AlGaN buffer. With this outstanding performance, the proposed HEMT device is a promising candidate for next-generation RF applications.

High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

Enhanced Breakdown Voltage and Dynamic Performance of GaN HEMTs with AlN/GaN Superlattice Buffer

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

GaN HEMTs on Low Resistivity Si Substrates with Thick Buffer Layers for RF Signal Amplification and Power Conversion

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications

A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric