Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric

Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

GaN HEMTs on Low Resistivity Si Substrates with Thick Buffer Layers for RF Signal Amplification and Power Conversion

GaN Based HEMT Materials and Devices Fabricated on SiC Substrate

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

GaN-based Power High-Electron-mobility Transistors on Si Substrates: from Materials to Devices

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

1500 V AlGaN/GaN MIS-HEMTs Employing LPCVD-Si3N4 as Gate Insulator

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Gate-first Process Compatible, High-Quality in Situ SiNx for Surface Passivation and Gate Dielectrics in AlGaN/GaN MISHEMTs

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer As Channel on SiC

A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk Between High-Side and Low-Side HEMTs

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications