3.0-V-Threshold-Voltage p-GaN HEMTs with Low-Loss Reverse Conduction capability

Feng Zhou,Weizong Xu,Yulei Jin,Tianyang Zhou,Fangfang Ren,Dong Zhou,Yuanyang Xia,Leke Wu,Yiheng Li,Tinggang Zhu,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

DOI: https://doi.org/10.1109/ISPSD57135.2023.10147450

2023-01-01

Abstract:In this work, the low-loss reverse conduction and high threshold voltage characteristics are simultaneously demonstrated in 1 kV/10 A <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex> -GaN high electron mobility transistors (HEMTs) on an existing 6-inch process platform, thanks to the combined advantages of the uniquely designed source-controlled p-GaN hybrid structure and improved gate-stack layer. The reverse-conduction turn-on voltage of the resultant device is effectively decoupled from the threshold voltage and gate bias, which is different from the conventional p-GaN gate HEMTs. In addition, superior dynamic performances with nanosecond reverse recovery and switching characteristics are also realized, revealing the notable potentials of the high- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{TH}}$</tex> low-loss p-GaN HEMTs for high-power and high-frequency applications.