Abstract:In this paper, we demonstrate a high voltage normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with the compatible high threshold voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> ) and high drain current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> ) at the same time. Through exploitation of the compact and even PEALD-Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> passivation layer, the high I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> is additionally complete within the device as a result of the reduction of the access region resistance. Meanwhile, with the optimization of the device structure, V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> is considerably improved within the actual device. Supported by the device fabrication, a comparatively large saturation I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> _ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SAT</inf> ) of 200mA/mm, the normally-off p-GaN gate HEMT presents a V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> =4.1V measured by linear extrapolation and a high breakdown voltage (BV) of 960V. This feature recommends that the p-GaN gate HEMT in this work can be a promising candidate in high V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> and I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> power devices.

Design and TCAD Study of p-GaN Gate HEMT With a Nanowire Structure for Stable VTH and Self-Clamped Gate Leakage

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Study on a p-GaN HEMT with composite passivation and composite barrier layers

960V normally-off p-GaN gate HEMT with high threshold voltage and drain current

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

Threshold Voltage Modulation and Gate Leakage Suppression of Enhancement-Mode GaN HEMT by Metal/Insulator/p-GaN Gate Structure

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability.

Simultaneously Achieving Large Gate Swing and Enhanced Threshold Voltage Stability in Metal/Insulator/n-GaN Gate HEMT

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

A Π-shaped p-GaN HEMT for reliable enhancement mode operation

High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping

High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Gate and barrier layer design of E-mode GaN HEMT with p-GaN gate structure

A Novel Normally-off Laterally Coupled p-GaN Gate HEMT

A Novel Gate-to-Source ESD Protection Clamp for GaN HEMT

Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation