Abstract:Highly stable threshold voltage $({V}_{\text {TH}})$ characteristics are an essential reliability requirement for p -GaN/AlGaN/GaN high-electron-mobility transistors (p-GaN HEMTs) to withstand various gate bias stresses for power applications. In this work, we demonstrate high- ${V}_{\text {TH}}$ (3.0 V) p-GaN HEMTs with robust ${V}_{\text {TH}}$ stability by p -GaN gate engineering via Mg doping and activation. The ${V}_{\text {TH}}$ degradation rates of the resulting device under both pulsed- ${I}/{V}$ and bias temperature instability (BTI) stress conditions are less than 10% at high temperatures up to 150°, which is much lower than that of conventional Schottky-type p -GaN HEMTs (20%–30%). Such notable ${V}_{\text {TH}}$ characteristics are due to the impact ionization (I.I.)-dependent hole compensation under certain gate stress, which effectively alleviates the electron trapping effect and reduces positive ${V}_{\text {TH}}$ shift. The I.I. occurring in the fully depleted p -GaN layer has been confirmed by both positive temperature-dependent gate breakdown characteristics and numerical simulations. Furthermore, shallow- and deep-level hole traps are identified in the gate-stack of high- ${V}_{\text {TH}}$ devices by performing the deep-level transient spectroscopy (DLTS) technique. Consequently, the trapping effect associated with hole traps may also alleviate the undesired electron-trapping-induced ${V}_{\text {TH}}$ shift. These results provide a critical understanding of the ${V}_{\text {TH}}$ stability of the high- ${V}_{\text {TH}}$ p -GaN HEMTs (HVT-HEMTs) and important design guidance for commercial device development.

The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique

Investigation on the Threshold Voltage Instability Mechanism of P-Gan Gate AlGaN/GaN HEMTs under High-Temperature Reverse Bias Stress

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Investigations of the gate-instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

The I D Instability Induced by Reverse Conduction Stress in p-GaN Gate HEMTs

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Study on the Degradation Mechanism of GaN MMIC Power Amplifiers under On-State with High Drain Bias

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

The ID Instability Induced by Reverse Conduction Stress in P-Gan Gate HEMTs

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped P-Gan Engineering

Quasi-bipolar Channel Modulation Instability Analysis for P-GaN Gate High Electron Mobility Transistor

Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-Gan AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection

High-temperature Electrical Performances and Physics-Based Analysis of P-Gan HEMT Device