Abstract:GaN-based high electron mobility transistors (HEMTs) have exhibited great application prospects in power and radio frequency devices, thanks to the superior properties of GaN. Despite the significant commercialization progress, the reliability of GaN-based HEMTs remains a challenge. This work experimentally investigates the time-dependent degradation of Mg-doped GaN/AlN superlattice HEMTs under both OFF-state and SEMI-ON-state bias conditions and proposes that GaN/AlN superlattices as a barrier can solve the Vth instability issues of GaN HEMTs under OFF-state and SEMI-ON-state bias conditions. On the one hand, in the SEMI-ON-state, the hot electron effect leads to the degradation of Ig, gm,max, and Id,sat to varying degrees. However, the as-prepared GaN-based HEMTs exhibit excellent Vth stability (almost no change) under hot electron injection, on the account of the excellent two-dimensional electron gas confinement in the GaN/AlN superlattice structure. On the other hand, in the OFF-state, positive Vth shift (about 0.12 V) is induced by the hole emission in the GaN/AlN superlattice structure under reverse bias stress. In addition, the stress-induced destruction of MgO gate dielectric gives rise to the gate leakage, which increases by 2 orders of magnitude and triggers an irreversible degradation (about 10%) of the gm,max. These results are expected to provide a solution to the Vth instability of GaN HEMTs.

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Investigation on the Threshold Voltage Instability Mechanism of P-Gan Gate AlGaN/GaN HEMTs under High-Temperature Reverse Bias Stress

Degradation under High-Field Stress and Gate Stress of AlGaN/GaN HEMTs

Different Gate Current Degradation Mechanisms in AlGaN/GaN High Electron Mobility Transistors

Characterization of Different Trap States in AlGaN/GaN MIS-HEMTs under High Reverse Gate Stress

The Degradation Mechanism of an AlGaN/GaN High Electron Mobility Transistor under Step-Stress

Degradation Behavior and Mechanisms of E-mode GaN HEMTs with p-GaN Gate under High Temperature Gate Bias Stress

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Investigating Two-Stage Degradation of Threshold Voltage Induced by Off-State Stress in AlGaN/GaN HEMTs

Electrical Degradations of P-Gan HEMT under High Off-state Bias Stress with Negative Gate Voltage

Different High-Electric-Field-Stress-Induced Degradation of SiN Passivated AlGaN/GaN HEMTs

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of P-Gan HEMT under Reverse-bias Stress

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

High-Electric-Field-Stress-Induced Degradation of Sin Passivated Algan/Gan High Electron Mobility Transistors

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs

Time-Dependent Threshold Voltage Instability Mechanisms of P-Gan Gate AlGaN/GaN HEMTs under High Reverse Bias Conditions

Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors