Abstract:In this study, we propose a simple measurement technique to quantitatively measure the time taken by threshold voltage of normally-off p-GaN AlGaN/GaN HEMTs to recover from a nominal operational gate stress-induced instability. The proposed technique eliminates the requirement to perform a full transfer characteristic sweep post-stress, thereby eliminating the measurement-induced instability effect, often colluding precise recovery time measurement. The rate of recovery and extracted recovery times hold significance in empirically correlating the location of traps in the p-GaN or AlGaN barrier region causing VTH instability. The gate of the HEMT is stressed at nominal operational drive voltages 1.5 V, 2 V, and 4 V for various time intervals from 500 μs to 100 s, and the time taken for the drain current to recover to prestress levels measured at near-threshold voltage (~1.1 VTH) is measured as the threshold voltage recovery time. With increasing gate stress voltages, 2DEG gets trapped at relatively deeper trap energy levels at the AlGaN/GaN interface requiring more emission time during the process of recovery, mandating larger recovery times. At higher stress voltage of 4 V, the Schottky gate leakage current is high enough enabling injected holes to cross the AlGaN barrier and counter-compensate for the deeply trapped 2DEG, requiring relatively the same recovery times as lower stress voltages where the gate leakage is negligibly small. With increasing stress time, the amount of 2DEG trapped increases, requiring more recovery time to de-trap and beyond a certain time, saturation of the trap density occurs causing the recovery time to plateau.

V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

The I D Instability Induced by Reverse Conduction Stress in p-GaN Gate HEMTs

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Gate Reliability of P-Gan Gate AlGaN/GaN High Electron Mobility Transistors

The ID Instability Induced by Reverse Conduction Stress in P-Gan Gate HEMTs

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Threshold Voltage Recovery Time Measurement Technique Post VTH Instability in Normally-Off p-Gate GaN High Electron Mobility Transistors

Hysteresis Analysis of Graphene Transistor under Repeated Test and Gate Voltage Stress

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Investigation of Gate Degradation Characteristics of AlGaN/GaN HEMTs under PWM Stress

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization