Abstract:In this Letter, we investigate the threshold voltage (VTH) instability of Schottky p-GaN gate high electron mobility transistors (SP-HEMTs) under high-frequency operation by a resistive-load hard switching method. The abnormal VTH instability is observed, which is different between fully and partially depleted SP-HEMTs (FD- and PD-HEMTs). Notably, for FD-HEMT, VTH shifts positively with effective stress time. However, the VTH instability in PD-HEMT is more complex. At low VGS (e.g., 3 V) and high VGS (e.g., 6 V), VTH shifts positively with stress time consistently. Nevertheless, at intermediate VGS levels (e.g., 4 and 5 V), VTH initially shifts positively and then negatively, displaying a non-monotonous variation. Furthermore, the frequency dependence of VTH is contingent upon VGS. At low VGS, VTH exhibits a negative shift with the increase in frequency. This trend inverses when VGS exceeds 4 V. And it should be noted that the extracted VTH under high-frequency operation is lower than their quasi-static values for both transistor types. This work depicts the physical process and mechanism of the abnormal VTH instability; different from the quasi-static case, hole accumulation effects will be enhanced due to the high dV/dt, which results in a lower VTH. The distinct VTH behaviors of FD- and PD-HEMTs are closely related to the trapping effects, as well as hole accumulation and insufficiency, within the two different p-GaN gate layers.

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

Physical insight into the abnormal V TH instability of Schottky p -GaN HEMTs under high-frequency operation

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

The I D Instability Induced by Reverse Conduction Stress in p-GaN Gate HEMTs

The ID Instability Induced by Reverse Conduction Stress in P-Gan Gate HEMTs

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Investigation of the Threshold Voltage Drift in Enhancement Mode Gan Mosfet under Negative Gate Bias Stress

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of P-Gan HEMT under Reverse-bias Stress

The Transition of Threshold Voltage Shift of Al$_{\text{2}}$O$_{\text{3}}$/Si$_{\text{3}}$N$_{\text{4}}$ AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

Gate Reliability of P-Gan Gate AlGaN/GaN High Electron Mobility Transistors

A Study on the Threshold Voltage Shift under Gate-pulse Stress in D-mode GaN MIS-HEMTs

Investigations of the gate-instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT