Abstract:In this work, the device stability of p-GaN gate HEMTs under self-heating effect is comprehensively investigated by the ON-state drain current injection (DCI) technique. By delicately modulating the DCI condition, the devices exhibit different chip temperatures ranging from 40 °C to 150 °C, while the devices show quite distinguishing instability behaviors. Particularly, substantial threshold voltage shift and saturation drain current degradation is constantly observed in the device with severe self-heating effect after DCI stress. Significant ${V}_{\text{th}}$ shift of +0.83 V and saturation current reduction up to 18% are observed after the DCI stress, corresponding to a chip temperature of ~150 °C. After the device degradation, the device characteristics show a recoverable dynamic. By investigating the gate leakage current together with the electrothermal device TCAD simulation, ${V}_{\text{th}}$ instability induced by the self-heating is revealed to be the electron trapping in the p-GaN gate-stack, while the saturation drain current degradation originates from a composited action of thermally enhanced electron trapping/de-trapping in p-GaN gate-stack as well as the access region at the hot spot close to the source field plate. The results reported in this work suggest that self-heating is a critical issue that may cause unstable operation of p-GaN gate HEMTs. The revealed underlying mechanisms are beneficial for further improving device stability.

The ID Instability Induced by Reverse Conduction Stress in P-Gan Gate HEMTs

The I D Instability Induced by Reverse Conduction Stress in p-GaN Gate HEMTs

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of P-Gan HEMT under Reverse-bias Stress

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Impact of Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Temperature-Dependent Gate Degradation of P-Gan Gate HEMTs under Static and Dynamic Positive Gate Stress

Reverse-Bias Stability And Reliability Of Enhancement-Mode Gan-Based Mis-Fet

Dependence of ${v}_{\text {TH}}$ Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Hysteresis Analysis of Graphene Transistor under Repeated Test and Gate Voltage Stress

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs