Abstract:Highly stable threshold voltage $({V}_{\text {TH}})$ characteristics are an essential reliability requirement for p -GaN/AlGaN/GaN high-electron-mobility transistors (p-GaN HEMTs) to withstand various gate bias stresses for power applications. In this work, we demonstrate high- ${V}_{\text {TH}}$ (3.0 V) p-GaN HEMTs with robust ${V}_{\text {TH}}$ stability by p -GaN gate engineering via Mg doping and activation. The ${V}_{\text {TH}}$ degradation rates of the resulting device under both pulsed- ${I}/{V}$ and bias temperature instability (BTI) stress conditions are less than 10% at high temperatures up to 150°, which is much lower than that of conventional Schottky-type p -GaN HEMTs (20%–30%). Such notable ${V}_{\text {TH}}$ characteristics are due to the impact ionization (I.I.)-dependent hole compensation under certain gate stress, which effectively alleviates the electron trapping effect and reduces positive ${V}_{\text {TH}}$ shift. The I.I. occurring in the fully depleted p -GaN layer has been confirmed by both positive temperature-dependent gate breakdown characteristics and numerical simulations. Furthermore, shallow- and deep-level hole traps are identified in the gate-stack of high- ${V}_{\text {TH}}$ devices by performing the deep-level transient spectroscopy (DLTS) technique. Consequently, the trapping effect associated with hole traps may also alleviate the undesired electron-trapping-induced ${V}_{\text {TH}}$ shift. These results provide a critical understanding of the ${V}_{\text {TH}}$ stability of the high- ${V}_{\text {TH}}$ p -GaN HEMTs (HVT-HEMTs) and important design guidance for commercial device development.

Reverse-Bias Stability And Reliability Of Enhancement-Mode Gan-Based Mis-Fet

Dependence of ${v}_{\text {TH}}$ Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET

Reverse-bias Stability and Reliability of Hole-Barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs

Suppressed Hole-Induced Degradation In E-Mode Gan Mis-Fets With Crystalline Gaoxn1-X Channel

Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline $ ext{GaO}_{mathrm{x}}mathrm{N}_{1-mathrm{x}}$ Channel

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline <tex>$\text{GaO}_{\mathrm{x}}\mathrm{N}_{1-\mathrm{x}}$</tex> Channel

Hole-Induced Degradation in ${E}$ -Mode GaN MIS-FETs: Impact of Substrate Terminations

Investigation of the Threshold Voltage Drift in Enhancement Mode Gan Mosfet under Negative Gate Bias Stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Time-Dependent Threshold Voltage Instability Mechanisms of P-Gan Gate AlGaN/GaN HEMTs under High Reverse Bias Conditions

Identifying the Location of Hole-Induced Gate Degradation in $\text{lpcvd} -\Text{sin}_{x}/\text{gan}$ MIS-FETs under High Reverse-Bias Stress

High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped P-Gan Engineering

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of P-Gan HEMT under Reverse-bias Stress

Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

Integration of Lpcvd-Sinx Gate Dielectric with Recessed-Gate E-Mode Gan Mis-Fets: Toward High Performance, High Stability and Long Tddb Lifetime

The ID Instability Induced by Reverse Conduction Stress in P-Gan Gate HEMTs

Threshold Voltage Instability of Enhancement-Mode GaN Buried <i>p</i>-Channel MOSFETs