Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress
Xuerui Niu,Xiaohua Ma,Bin Hou,Ling Yang,Yu-Shan Lin,Qing Zhu,Fong-Min Ciou,Kuan-Hsu Chen,Yilin Chen,Jiale Du,Mei Wu,Meng Zhang,Chong Wang,Ting-Chang Chang,Yue Hao
DOI: https://doi.org/10.1109/ted.2021.3096929
IF: 3.1
2021-09-01
IEEE Transactions on Electron Devices
Abstract:The gate and drain bias dependence of hot electron-induced degradation in GaN-based metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) was investigated in this work. Devices exhibit an abnormal increase in peak transconductance (${G}_{m}$ ,max) during hot carrier stress (HCS) and a partially quick recovery of that after removing the electrical stress. A physical model is proposed to explain the abnormal electrical characteristics caused by HCS. By using density functional theory (DFT), we calculated the energy for electrons to dehydrogenate preexisting [NGaH3]−1 complexes in GaN layer during stress. The dehydrogenation of defects affects the Gm,max of devices. Meanwhile, the neutralization of donor traps in AlGaN barrier layer also plays a significant role in the increase of Gm,max and the detrapping effect of electrons from these traps after removing the electrical stress accounts for the partially quick recovery of ${G}_{m, ext{max}}$ .
engineering, electrical & electronic,physics, applied