Abstract:Enhancement-mode (E-mode) GaN MOS-HEMTs using recess process typically face the challenge of precise thickness control, surface roughness issue, and interface traps, all of which could lead to the degradation of the device performance and cause reliability issues. In this article, we use a combined process of atomic layer etching (ALE) technique and atomic layer deposited (ALD) HfSiO dielectric. ALE is repeated oxidation and dry etching process with minimal surface damage, leading to a precisely controlled low-damage recess channel area. The fabricated AlGaN/GaN MOS-HEMTs exhibit E-mode operation with a positive threshold voltage (V-th) of +2.1 V with small V-th dispersion for different devices, an ultrahigh drain current ON-OFF ratio over 1010 and a low ON-resistance (R-ON) of 11.5 Omega . mm at gate-to-drain length (L-GD) of 25 mu m. Source field plate (SFP) structure is employed to reduce the charge trapping process and improve the reliability at high voltages. The current collapse of the E-mode device with SFP structure can be effectively suppressed due to the optimized redistribution of the peak electric field in the gate-to-drain access region, where a significantly improved dynamic R-ON of only 1.17 times increase from the static R-ON after OFF-state V-DS stress of 600 V. Moreover, the enhanced vertical electric field with decreased AlGaN barrier thickness and the positive shift in threshold voltage for the E-mode device can effectively suppress the current collapse, which outperforms the depletion-mode counterpart. The breakdown voltage reaches a considerable value of 1560 V at an OFF-state current density of 1 mu A/mm.

Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline <tex>$\text{GaO}_{\mathrm{x}}\mathrm{N}_{1-\mathrm{x}}$</tex> Channel

Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline $ ext{GaO}_{mathrm{x}}mathrm{N}_{1-mathrm{x}}$ Channel

Suppressed Hole-Induced Degradation In E-Mode Gan Mis-Fets With Crystalline Gaoxn1-X Channel

Reverse-Bias Stability And Reliability Of Enhancement-Mode Gan-Based Mis-Fet

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

Hole-Induced Degradation in ${E}$ -Mode GaN MIS-FETs: Impact of Substrate Terminations

Reverse-bias Stability and Reliability of Hole-Barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs

Identifying the Location of Hole-Induced Gate Degradation in $\text{lpcvd} -\Text{sin}_{x}/\text{gan}$ MIS-FETs under High Reverse-Bias Stress

Dependence of ${v}_{\text {TH}}$ Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Threshold Voltage Instability of Enhancement-Mode GaN Buried <i>p</i>-Channel MOSFETs

Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation

High-performance Fully-Recessed Enhancement-Mode GaN MIS-FETs with Crystalline Oxide Interlayer

Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Degradation Behavior and Mechanism of GaN HEMTs with P-Type Gate in the Third Quadrant under Repetitive Surge Current Stress

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

Atomic-scale Identification of Crystalline GaON Nanophase for Enhanced GaN MIS-FET Channel

High Threshold Voltage Enhancement-Mode GaN P-Fet with Si-rich LPCVD SiNx Gate Insulator for High Hole Mobility