Abstract:In this letter, a p-GaN gate high-electron-mobility transistor (HEMT) with a high threshold voltage and better gate reliability was demonstrated by using selective plasma oxidation (SPO) and an additional low-temperature annealing step before gate metal is evaporated. After the SPO, a gallium oxynitride (GaON) dielectric layer was formed on the surface of p-GaN under the gate metal, and was studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), high-resolution transmission electron microscopy (HR-TEM) and energy dispersion spectroscopy (EDS). In addition, the fabricated metal/GaON/p-GaN gate HEMT exhibited a large threshold voltage (V TH ) improvement from 1.46 V to 2.47 V. Furthermore, the forward gate breakdown voltage (V GS,BD ) increased from 7.55 V to 11.10 V, and the maximum forward gate operating voltage (V GS-max ) significantly improved from 5.0 V to 7.80 V for a ten-year lifetime with a 63.2% failure rate. Kelvin Probe Force Microscopy (KPFM) reveals that the surface potential increased after SPO, and the shift of valence band maximum (VBM) obtained by XPS spectra was 0.7 eV lower than that of the p-GaN, which further improves the Schottky barrier height (SBH) at the gate metal/GaON interfaces to holes, thereby improving V TH and reducing I GS of the device. As a barrier layer, GaON suppressed the injection of carrier into the depletion region under a high electric field and enhanced the reliability of the gate.

Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation

Suppression of Hot-Electron-Induced Dynamic RON Degradation in P-Gan Gate HEMT Using Active Passivation and Virtual Body

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping

Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT

Exploitation of Hole Injection and Spreading for Dynamic Enhancement in P-Gan Gate HEMT under Room/High Temperatures

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Improved breakdown voltage and dynamic R on characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure

A Double-Gate AlGaN/GaN HEMT with Improved Dynamic Performance

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Normally-off GaON/p-GaN Gate HEMTs with Selective Plasma Oxidation: from Structural Characterization, Performance Improvement to Physical Mechanism

Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Simulation Study of a High Gate-to-Source ESD Robustness Power P-Gan HEMT with Self-Triggered Discharging Channel

Normally-off GaON/p-GaN gate HEMTs with using selective plasma oxidation: from structural characterization, performance improvement to physical mechanism

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test

600-V P-Gan Gate HEMT with Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

Insulated P-Gan Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance

Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism