Abstract:In this letter, a p-GaN gate high-electron-mobility transistor (HEMT) with a high threshold voltage and better gate reliability was demonstrated by using selective plasma oxidation (SPO) and an additional low-temperature annealing step before gate metal is evaporated. After the SPO, a gallium oxynitride (GaON) dielectric layer was formed on the surface of p-GaN under the gate metal, and was studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), high-resolution transmission electron microscopy (HR-TEM) and energy dispersion spectroscopy (EDS). In addition, the fabricated metal/GaON/p-GaN gate HEMT exhibited a large threshold voltage (V TH ) improvement from 1.46 V to 2.47 V. Furthermore, the forward gate breakdown voltage (V GS,BD ) increased from 7.55 V to 11.10 V, and the maximum forward gate operating voltage (V GS-max ) significantly improved from 5.0 V to 7.80 V for a ten-year lifetime with a 63.2% failure rate. Kelvin Probe Force Microscopy (KPFM) reveals that the surface potential increased after SPO, and the shift of valence band maximum (VBM) obtained by XPS spectra was 0.7 eV lower than that of the p-GaN, which further improves the Schottky barrier height (SBH) at the gate metal/GaON interfaces to holes, thereby improving V TH and reducing I GS of the device. As a barrier layer, GaON suppressed the injection of carrier into the depletion region under a high electric field and enhanced the reliability of the gate.

Improved breakdown voltage and dynamic R on characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure

Reducing dynamic on-resistance of p-GaN gate HEMTs using dual field plate configurations

Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test

Improvement of Breakdown Characteristic for a Novel GaN HEMT with Enhanced Resistance Single-Event Transient Effect

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing vertical gate structure and composite interlayers

Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

Breakdown Voltage Enhancement and Specific On-Resistance Reduction in Depletion-Mode GaN HEMTs by Co-Modulating Electric Field

Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping

High V th and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer

Temperature-Dependent Dynamic Ron of GaN E-HEMTs: the Impact of P-Gan Drain

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Normally-off GaON/p-GaN Gate HEMTs with Selective Plasma Oxidation: from Structural Characterization, Performance Improvement to Physical Mechanism

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

Normally-off GaON/p-GaN gate HEMTs with using selective plasma oxidation: from structural characterization, performance improvement to physical mechanism

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Suppression of Hot-Electron-Induced Dynamic RON Degradation in P-Gan Gate HEMT Using Active Passivation and Virtual Body

Study on the Dynamic R<sub>on</sub> Degradation in GaN-based Power HEMT

Optimizing Breakdown Voltage and On-State Resistance by Modulating the Barrier Height along 2DEG Channel for Power P-Gan HEMTs

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling