Abstract:Highly stable threshold voltage $({V}_{\text {TH}})$ characteristics are an essential reliability requirement for p -GaN/AlGaN/GaN high-electron-mobility transistors (p-GaN HEMTs) to withstand various gate bias stresses for power applications. In this work, we demonstrate high- ${V}_{\text {TH}}$ (3.0 V) p-GaN HEMTs with robust ${V}_{\text {TH}}$ stability by p -GaN gate engineering via Mg doping and activation. The ${V}_{\text {TH}}$ degradation rates of the resulting device under both pulsed- ${I}/{V}$ and bias temperature instability (BTI) stress conditions are less than 10% at high temperatures up to 150°, which is much lower than that of conventional Schottky-type p -GaN HEMTs (20%–30%). Such notable ${V}_{\text {TH}}$ characteristics are due to the impact ionization (I.I.)-dependent hole compensation under certain gate stress, which effectively alleviates the electron trapping effect and reduces positive ${V}_{\text {TH}}$ shift. The I.I. occurring in the fully depleted p -GaN layer has been confirmed by both positive temperature-dependent gate breakdown characteristics and numerical simulations. Furthermore, shallow- and deep-level hole traps are identified in the gate-stack of high- ${V}_{\text {TH}}$ devices by performing the deep-level transient spectroscopy (DLTS) technique. Consequently, the trapping effect associated with hole traps may also alleviate the undesired electron-trapping-induced ${V}_{\text {TH}}$ shift. These results provide a critical understanding of the ${V}_{\text {TH}}$ stability of the high- ${V}_{\text {TH}}$ p -GaN HEMTs (HVT-HEMTs) and important design guidance for commercial device development.

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Suppression of Hot-Electron-Induced Dynamic RON Degradation in P-Gan Gate HEMT Using Active Passivation and Virtual Body

Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT

Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective Hole Injection

Exploitation of Hole Injection and Spreading for Dynamic Enhancement in P-Gan Gate HEMT under Room/High Temperatures

600-V P-Gan Gate HEMT with Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Insulated P-Gan Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation P-Gan Gate HEMT Via Light/Hole Pumping

High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped P-Gan Engineering

Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

High Dynamic Stability in Enhancement-Mode Active-Passivation P-Gan Gate HEMT

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

High-Voltage E-Mode P-Gan Gate HEMT on Sapphire with Gate Termination Extension

Simultaneously Achieving Large Gate Swing and Enhanced Threshold Voltage Stability in Metal/Insulator/n-GaN Gate HEMT

Improved breakdown voltage and dynamic R on characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure