Abstract:An active-passivation p-GaN gate HEMT (AP-HEMT), featuring an active p-GaN passivation layer extending into the drain-side access region, is demonstrated on a commercial E-mode p-GaN/AlGaN/GaN heterostructure wafer. The active passivation layer (APL) is electrically connected to the p-GaN gate, and thus can supply/release mobile holes through gate electrode. The mobile holes in the APL effectively shields the overlaying surface traps from depleting the underlying 2DEG channel, and thus results in a much improved dynamic <inline-formula> <tex-math notation="LaTeX">${R}_{\text {on}}$ </tex-math></inline-formula>. After a 10-ms 650-V <inline-formula> <tex-math notation="LaTeX">${V}_{\text {DS}}$ </tex-math></inline-formula> stress, the measured dynamic <inline-formula> <tex-math notation="LaTeX">${R}_{\text {on}}$ </tex-math></inline-formula>/static <inline-formula> <tex-math notation="LaTeX">${R}_{\text {on}}$ </tex-math></inline-formula> is 4.30 for Conv-HEMT, but only 1.39 for AP-HEMT. Specially designed HEMTs with a surface testing electrode (ST) in the access region are fabricated to verify the screening effect. A negative <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> mimics the virtual gate effect caused by negative surface charges, resulting in a reduced drain current in conventional HEMT (Conv-HEMT). In the AP-HEMT, a negative <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> is shown to induce no change in the drain current, indicating an effective screening of the trap states. On the other hand, under a positive <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> stress applied to a Conv-HEMT, electrons in the 2DEG channel are pulled over the AlGaN barrier and get trapped at the surface, resulting in a sharply decreased drain current after positive <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> is removed. For the AP-HEMT, the drain current remain unchanged after the positive <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> is removed. The actively passivated HEMT exhibits the highly desired suppression of surface trap induced dynamic <inline-formula> <tex-math notation="LaTeX">${R}_{\text {on}}$ </tex-math></inline-formula> degradation.

600-V P-Gan Gate HEMT with Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

Exploitation of Hole Injection and Spreading for Dynamic Enhancement in P-Gan Gate HEMT under Room/High Temperatures

Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation P-Gan Gate HEMT Via Light/Hole Pumping

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected P-Gan (SCPG): A Simulation Study

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps

Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective Hole Injection

Study on a p-GaN HEMT with composite passivation and composite barrier layers

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

Enhanced Breakdown Voltage and Dynamic Performance of GaN HEMTs with AlN/GaN Superlattice Buffer

Suppression of Hot-Electron-Induced Dynamic RON Degradation in P-Gan Gate HEMT Using Active Passivation and Virtual Body

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Simulation Study of a High Gate-to-Source ESD Robustness Power P-Gan HEMT with Self-Triggered Discharging Channel

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

Insulated P-Gan Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs