Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

Chen Wang,Jinyan Wang,Xin Wang,Ziheng Liu,Jiayin He,Ju Gao,Chengkang Ao,Maojun Wang,Jin Wei

DOI: https://doi.org/10.1109/led.2024.3448362

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:This letter demonstrates a hybrid p-GaN/MIS gate HEMT (HG-HEMT) to suppress the drain-induced dynamic threshold voltage ( V th ) instability. By implementing a depletion-mode (D-mode) MIS gate adjacent to Schottky-type p-GaN gate, the drain-induced bidirectional shift of dynamic V th is significantly reduced. The fabricated HG-HEMT exhibits decent performances compared to the conventional Schottky-type p-GaN gate HEMT (Conv-HEMT), with saturation current ( I D,sat ) of 345 mA/mm, on-resistance ( R ON ) of 13.2 Ω·mm, and hard breakdown voltage ( BV ) of 1315 V, which are similar to the Conv-HEMT. The HG-HEMT demonstrates significantly improved dynamic V th stability under drain bias, with a negligible dynamic V th shift at on-state drain bias of 50 V, and a small positive dynamic V th shift of +0.05 V after off-state drain bias of 400 V. As a comparison, V th shifts of the Conv-HEMT are –0.28 V and +0.42 V, respectively. The improved dynamic V th stability of the HG-HEMT is owing to a D-mode MIS-gate region that shields the interplay between drain and the p-GaN region. The proposed HG-HEMT paves the way for highly stable GaN power electronics applications.