Abstract:In this work, the device stability of p-GaN gate HEMTs under self-heating effect is comprehensively investigated by the ON-state drain current injection (DCI) technique. By delicately modulating the DCI condition, the devices exhibit different chip temperatures ranging from 40 °C to 150 °C, while the devices show quite distinguishing instability behaviors. Particularly, substantial threshold voltage shift and saturation drain current degradation is constantly observed in the device with severe self-heating effect after DCI stress. Significant ${V}_{\text{th}}$ shift of +0.83 V and saturation current reduction up to 18% are observed after the DCI stress, corresponding to a chip temperature of ~150 °C. After the device degradation, the device characteristics show a recoverable dynamic. By investigating the gate leakage current together with the electrothermal device TCAD simulation, ${V}_{\text{th}}$ instability induced by the self-heating is revealed to be the electron trapping in the p-GaN gate-stack, while the saturation drain current degradation originates from a composited action of thermally enhanced electron trapping/de-trapping in p-GaN gate-stack as well as the access region at the hot spot close to the source field plate. The results reported in this work suggest that self-heating is a critical issue that may cause unstable operation of p-GaN gate HEMTs. The revealed underlying mechanisms are beneficial for further improving device stability.

Exploitation of Hole Injection and Spreading for Dynamic Enhancement in P-Gan Gate HEMT under Room/High Temperatures

600-V P-Gan Gate HEMT with Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation P-Gan Gate HEMT Via Light/Hole Pumping

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected P-Gan (SCPG): A Simulation Study

Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective Hole Injection

Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation

Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

Suppression of Hot-Electron-Induced Dynamic RON Degradation in P-Gan Gate HEMT Using Active Passivation and Virtual Body

High Dynamic Stability in Enhancement-Mode Active-Passivation P-Gan Gate HEMT

Insulated P-Gan Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

Investigation of Temperature-Dependent Dynamic <i>R</i><sub>ON</sub> of GaN HEMT with Hybrid-Drain under Hard and Soft Switching

Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of P-Gan HEMT under Reverse-bias Stress

Temperature-Dependent Dynamic Ron of GaN E-HEMTs: the Impact of P-Gan Drain

Characterization of Dynamic $i_{\text{off}}$ in Schottky-Type $P$-Gan Gate HEMTs

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique

Improved breakdown voltage and dynamic R on characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure