Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation P-Gan Gate HEMT Via Light/Hole Pumping

Yanlin Wu,Muqin Nuo,Junjie Yang,Wei Lin,Xiaosen Liu,Xuelin Yang,Jinyan Wang,Yilong Hao,Bo Shen,Maojun Wang,Jin Wei

DOI: https://doi.org/10.1109/ted.2023.3336302

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:This work investigates the effect of hole injection/light emission to suppress buffer-related dynamic ${R}_{\text {ON}}$ degradation in an E-mode GaN-on-Si active-passivation p-GaN gate high electron mobility transistor (AP-HEMT). The AP-HEMT features a thin p-GaN layer (i.e., the active passivation) covering the drain-side access region. The conventional p-GaN gate HEMT (Conv-HEMT) has been reported to mitigate the buffer trapping by hole injection/light emission from gate that pumps out the trapped electrons in buffer. In the AP-HEMT, hole injection and light emission occurs at the active passivation region as well. To evaluate the effectiveness of the hole/light pumping effect in AP-HEMT, back-gating measurements were performed to assess the recovery of buffer-related dynamic ${R}_{\text {ON}}$ . In the positive substrate voltage ( ${V}_{\text {SUB}}{)}$ sweep test, the ${I}_{\text {D}}$ of Conv-HEMTs drops significantly during the back-sweep due to the negative charges trapped in the buffer. However, the AP-HEMT shows no reduction in ${I}_{\text {D}}$ during VSUB back-sweeps. In the recovery test after a ${V}_{\text {SUB stress}}$ , the AP-HEMT experiences much smaller initial ${I}_{\text {D}}$ degradation and recovers much faster than the Conv-HEMT. These results confirm that the hole/light pumping effect in the AP-HEMT effectively suppresses buffer-related dynamic ${R}_{\text {ON}}$ degradation.