Abstract:Gallium nitride (GaN) power devices enable power electronic systems with enhanced power density and efficiency. Dynamic on-resistance ( $R_{mathrm{scriptscriptstyle ON}}$ ) degradation (or current collapse), originating from buffer trapping, surface trapping and gate instability, has been regarded as a primary challenge for the lateral GaN-on-Si power devices. In this paper, we present an overview and discussion of the mechanisms, characterizations, modeling, and solutions for the degradation of dynamic $R_{mathrm{scriptscriptstyle ON}}$ in GaN power devices. The complex dynamics of acceptor/donor buffer traps and their impacts on dynamic $R_{mathrm{scriptscriptstyle ON}}$ have been analyzed and revealed by TCAD simulations and high-voltage back-gating measurements. The gate instability-induced dynamic $R_{mathrm{scriptscriptstyle ON}}$ increase in different GaN device technologies and the role of gate overdrive are also discussed. Wafer-level and board-level characterization techniques enabling accurate dynamic $R_{mathrm{scriptscriptstyle ON}}$ evaluation are reviewed. The dynamic $R_{mathrm{scriptscriptstyle ON}}$ performance of the state-of-the-art commercial GaN devices is presented, and a behavioral model with the dynamic $R_{mathrm{scriptscriptstyle ON}}$ degradation taken into consideration has been implemented for circuit analysis. The latest progress in GaN device technologies for enhanced dynamic performance is also reviewed and discussed.

Buffer trapping-induced R<inf>ON</inf> degradation in GaN-on-Si power transistors: Role of electron injection from Si substrate

Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages

Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation P-Gan Gate HEMT Via Light/Hole Pumping

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

600-V P-Gan Gate HEMT with Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

Rapid Detection of Capture and Emission Processes in Surface and Buffer Traps: Understanding Dynamic Degradation in GaN Power Devices

Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected P-Gan (SCPG): A Simulation Study

Influence of Deep-Level Traps on the Breakdown Characteristics of AlGaN/GaN High Electron Mobility Transistors

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Positive and negative charge trapping GaN HEMTs: interplay between thermal emission and transport-limited processes

TCAD Study on Suppression of Substrate-Induced Degradation in GaN-on-Si Integrated Half-Bridge Circuit by Local Si Lateral Etch

Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices

Third-Quadrant Conduction Induced Dynamic $\textit{r}_{\text{on}}$ Effect in GaN Gate-Injection-Transistor

Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge With Partial Recessed-Gate HEMTs

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

Role of Electron Injection on Vertical Leakage in GaN-on-Si Epitaxial Layers