Abstract:In this work, the leakage current properties of semi-insulating GaN (SI-GaN) grown on Si(1 1 1) substrate with a low-temperature (LT) AlN interlayer were studied. Two terminal lateral current-voltage measurements revealed an early conduction phenomenon via buffer layers with an LT-AlN interlayer, in which both p-and n-type conduction phenomena were observed from Hall-effect measurement during temperature changing. It is suggested that the p-type conduction existed in the Si substrate due to the diffusion of Al atoms into the Si substrate during the epitaxial growth. The origin of n-type conduction was two-dimensional electron gas (2DEG) in the LT-AlN/ GaN interface, which acted as a conduction channel in SI-GaN. Furthermore, the vertical leakage current measurement and the space charge limited current model were used to analyse the impact of the 2DEG conduction channel on the leakage current properties. It is revealed that leakage current properties are very sensitive to the thickness of the GaN layer above the LT-AlN interlayer (Top-GaN). Increasing the thickness of Top-GaN becomes an effective way to suppress leakage current. Therefore, both strain engineering and leakage current properties are essential factors to be considered in the selection of strain compensation interlayer in the growth of SI-GaN on Si substrate for power switching applications.

Role of Electron Injection on Vertical Leakage in GaN-on-Si Epitaxial Layers

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

The Effect of Kink and Vertical Leakage Mechanisms in GaN-on-Si Epitaxial Layers

Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

GaN-on-Si lateral power devices with symmetric vertical leakage: The impact of floating substrate

Vertical Leakage Induced Current Degradation And Relevant Traps With Large Lattice Relaxation In Algan/Gan Heterostructures On Si

Leakage Current in GaN-on-GaN Vertical GaN SBDs Grown by HVPE on Native GaN Substrates

Hot Electron Assisted Vertical Leakage/breakdown in AlGaN/GaN Heterostructures on Si Substrates

Buffer trapping-induced R<inf>ON</inf> degradation in GaN-on-Si power transistors: Role of electron injection from Si substrate

Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate

Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD with High-Energy Ion Implanted Guard Rings

Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier

GaN Based Vertical Transistors on GaN Substrates

Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

Trap-assisted tunneling current of ultrathin InAlN/GaN HEMTs on Si (1 1 1) substrate

Mechanism of Leakage of Ion-Implantation Isolated AlGaN/GaN MIS-high Electron Mobility Transistors on Si Substrate