Abstract:In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-electron-mobility-transistors (HEMTs) passivated by amorphous-SiNx and monocrystal-like AlN. The effects of interface traps and polarization charges on current collapse are investigated by TCAD simulations and experimental characterizations. Surface/interface deep levels can be compensated by both shallow donor-like traps (SiNx passivation) and polarization charges (AlN passivation) at passivation/heterostructure interface, but with different levels of effectiveness under fast switching conditions. SiNx-passivation introduces shallow donor-like trap states with short time constant that favors a fast emission of trapped electrons in the access region and suppressed current collapse, but nevertheless exhibits more severe time-dependent recovery of dynamic on-resistance. For AlN passivation, interface traps are compensated by the fixed positive polarization charges and the off-state depletion region (in the 2DEG channel) is formed predominantly by electric-field effect, leading to an immediate accumulation of high channel electron concentration after switching the HEMT devices back to on-state and instant response of drain current to gate and drain bias. The field plate structure is necessary in SiNx-passivated devices for both current collapse suppression and electric field alleviation. With AlN passivation, the field plate can be solely designed for achieving more uniform electric field distribution for gate reliability concern without the concern of current collapse.

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Role of Electron Injection on Vertical Leakage in GaN-on-Si Epitaxial Layers

Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Vertical Leakage Induced Current Degradation And Relevant Traps With Large Lattice Relaxation In Algan/Gan Heterostructures On Si

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

GaN-on-Si lateral power devices with symmetric vertical leakage: The impact of floating substrate

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

The Effect of Kink and Vertical Leakage Mechanisms in GaN-on-Si Epitaxial Layers

Low RF Loss and Low Dislocation Density of GaN Grown on High-Resistivity Si Substrates

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Low-temperature characteristics and gate leakage mechanisms of LPCVD-SiN<i>x</i>/AlGaN/GaN MIS-HEMTs