Abstract:Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-modules for 5G and 6G applications. The main contribution to RF losses is the interface between the III-N layer and the HR Si wafer, more specifically the AlN/Si interface. At this interface, a parasitic surface conduction layer exists in Si, which decreases the substrate effective resistivity sensed by overlying circuitry below the nominal Si resistivity. However, a clear understanding of this interface with control of the parasitic channel is lacking. In this letter, a detailed physical and electrical description of MOCVD-grown AlN/Si structures is presented. The presence of a $\text{SiC}_\text{x}\text{N}_\text{y}$ interfacial layer is revealed and its importance for RF losses is shown. Through C-V and I-V characterisation, an increase in the C concentration of this interfacial layer is linked to the formation of negative charge at the AlN/Si interface, which counteracts the positive charge present in the 0-predose limit. The variation of TMAl predose is shown to allow precise tuning of the C composition and, consequently, the resulting interface charge. Notably, a linear relationship between predose and net interface charge is observed and confirmed by the fabrication of an AlN/Si sample with close to zero net charge. In addition, a higher $D_{it}$ ($\sim 2\times 10^{12}$ cm$^\text{-2}$) for such compensated samples is observed and can contribute to low RF loss. An exceptionally high effective resistivity of above 8 k$\Omega\cdot$cm is achieved, corresponding to an RF loss below 0.3 dB/mm at 10 GHz.

Low RF Loss and Low Dislocation Density of GaN Grown on High-Resistivity Si Substrates

Ultralow-Supersaturation Al Pretreatment Toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Al diffusion at AlN/Si interface and its suppression through substrate nitridation

RF Loss Reduction by a Carbon-Regulated Si Substrate Engineering in GaN-based HEMT Buffer Stacks

Ultralow RF Loss for Si-Based GaN Materials with a Variable Power Phosphorus Ion Implantation Method

Low radio frequency loss and buffer-free GaN directly on physical-vapor-deposition AlN/Si templates

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Low Ohmic Contact Resistivity Realized by in Situ SiNx Insertion for High Al-composition-AlGaN/GaN Heterostructure

Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

More Than 60% RF Loss Reduction and Improved Crystal Quality of GaN-on-Si Achieved by In-Situ Doping Tert-Butylphosphorus

High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 As Passivation and Post Gate-Recess Channel Protection Layers

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

High Mobility Algan/Gan Heterostructures Grown on Si Substrates Using A Large Lattice-Mismatch Induced Stress Control Technology

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

High-mobility N−-Gan Drift Layer Grown on Si Substrates

High Mobility GaN Drift Layer on Si Substrates: the Role of Surface N Vacancy on Carbon Incorporation

Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors

Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates

Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes