Abstract:AlN is deposited on silicon carbide (SiC) for high-power electronics; in these devices, AlN acts as both a buffer layer for the growth of the active device and a thermal conductor. However, the mechanism of thermal transport through the AlN-SiC interfaces and through grain boundaries of AlN has not been clearly analyzed, even though AlN forms grain boundaries during the deposition process. The thermal properties of the AlN-SiC interface and the inversion domain boundaries (IDBs) of AlN were examined by a phonon transport model based on a nonequilibrium Green function formalism and first-principles calculations. The interface and grain boundary models were designed, and the thermal resistances (TRs) and origins of TR were examined. The TRs of the AlN-SiC interface and the IDB of AlN are much higher than the TRs of AlN and SiC of relevant thickness. Elemental intermixing and vacancy formation were modeled. The formation of charge-balanced defect of VAl + 3ON is thermodynamically favorable compared to other defects, indicating that ON induces formation of VAl. The charge-balanced defect combining VAl and ON increases the TRs of both AlN-SiC interfaces and AlN grain boundaries because vacancy defects induce larger changes in mass than all other defects, and TRs are proportional to changes in mass. In addition, VAl defects are increased by excess ON, resulting in a continuous increase in TR, and then, the calculated thermal boundary resistance (TBR) of the AlN-SiC interface with increased density of VAl by excess ON reaches the experimental TBR. Therefore, it is expected that the large increase in TR by the formation of VAl + ON would be suppressed by controlling the low O density during synthesis.

Al diffusion at AlN/Si interface and its suppression through substrate nitridation

Low RF Loss and Low Dislocation Density of GaN Grown on High-Resistivity Si Substrates

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates

Ultralow-Supersaturation Al Pretreatment Toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures

Low radio frequency loss and buffer-free GaN directly on physical-vapor-deposition AlN/Si templates

Ultralow RF Loss for Si-Based GaN Materials with a Variable Power Phosphorus Ion Implantation Method

Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces

RF Loss Reduction by a Carbon-Regulated Si Substrate Engineering in GaN-based HEMT Buffer Stacks

The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Thermal Transport at the AlN-SiC Interface and Grain Boundary of AlN

Study on the AlN/Si Interface Properties

Low Ohmic Contact Resistivity Realized by in Situ SiNx Insertion for High Al-composition-AlGaN/GaN Heterostructure

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers

Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors