Abstract:Silicon carbide (SiC) has been widely added into light metals, e.g., Al, to enhance their mechanical performance and corrosion resistance. SiC particle-reinforced metal matrix composites (SiC-MMCs) exhibit low weight/volume ratios, high strength/hardness, high corrosion resistance, and thermal stability. They have potential applications in aerospace, automobiles, and other specialized equipment. The macro-mechanical properties of Al/SiC composites depend on the local structures and chemical interactions at the Al/SiC interfaces at the atomic level. Moreover, the added SiC particles may act as potential nucleation sites during solidification. We investigate local atomic ordering and chemical interactions at the interfaces between liquid Al (Al(l) in short) and polar SiC substrates using ab initio molecular dynamics (AIMD) methods. The simulations reveal a rich variety of interfacial interactions. Charge transfer occurs from Al(l) to C-terminating atoms (Δq = 0.3e/Al on average), while chemical bonding between interfacial Si and Al(l) atoms is more covalent with a minor charge transfer of Δq = 0.04e/Al. The prenucleation at both interfaces is moderate with three to four recognizable layers. The information obtained here helps increase understanding of the interfacial interactions at Al/SiC at the atomic level and the related macro-mechanical properties, which is helpful in designing novel SiC-MMC materials with desirable properties and optimizing related manufacturing and machining processes.

Study on the AlN/Si Interface Properties

Study on the AlN/Si(111) interface properties

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Study of Interface Trap States of AlN-Si(111) Heterostructure*

Electrical Properties of Al/AlN/Si MIS Structure

Dielectric Properties of AlN Film on Si Substrate

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

Interfacial Properties of AlN/Si (111) Grown by Metal-Organic Chemical Vapour Deposition

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Characterization of Cubic Phase MgZnO/Si(1 0 0) Interfaces

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

Interface/Border Trap Characterization Of Al2o3/Aln/Gan Metal-Oxide-Semiconductor Structures With An Aln Interfacial Layer

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

Electrical and Dielectric Behaviors of Al/SiO2-surfactant/n-Si Schottky Structure in Wide Range of Voltage and Frequency

Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates

Al diffusion at AlN/Si interface and its suppression through substrate nitridation

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Interfacial Structures and Properties of SiN Layer in a-Si Thin Film Transistors

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al2O3/SiO2 stacked dielectric