Abstract:AlN is deposited on silicon carbide (SiC) for high-power electronics; in these devices, AlN acts as both a buffer layer for the growth of the active device and a thermal conductor. However, the mechanism of thermal transport through the AlN-SiC interfaces and through grain boundaries of AlN has not been clearly analyzed, even though AlN forms grain boundaries during the deposition process. The thermal properties of the AlN-SiC interface and the inversion domain boundaries (IDBs) of AlN were examined by a phonon transport model based on a nonequilibrium Green function formalism and first-principles calculations. The interface and grain boundary models were designed, and the thermal resistances (TRs) and origins of TR were examined. The TRs of the AlN-SiC interface and the IDB of AlN are much higher than the TRs of AlN and SiC of relevant thickness. Elemental intermixing and vacancy formation were modeled. The formation of charge-balanced defect of VAl + 3ON is thermodynamically favorable compared to other defects, indicating that ON induces formation of VAl. The charge-balanced defect combining VAl and ON increases the TRs of both AlN-SiC interfaces and AlN grain boundaries because vacancy defects induce larger changes in mass than all other defects, and TRs are proportional to changes in mass. In addition, VAl defects are increased by excess ON, resulting in a continuous increase in TR, and then, the calculated thermal boundary resistance (TBR) of the AlN-SiC interface with increased density of VAl by excess ON reaches the experimental TBR. Therefore, it is expected that the large increase in TR by the formation of VAl + ON would be suppressed by controlling the low O density during synthesis.

Dielectric Properties of AlN Film on Si Substrate

Study on the AlN/Si Interface Properties

Study on the AlN/Si(111) interface properties

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

Structure and Electrical Conductivity of Thin AlN Films on Si

Electrical Properties of Al/AlN/Si MIS Structure

Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Aluminum‐vacancy‐related Dielectric Relaxations in AlN Ceramics

Study on AlN Passivation Layer Grown by Magnetic Sputtering

Dielectric property of AlN/PE composite

Preparation and Dielectric Properties of SiC-AlN Solid Solutions

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

The optical properties and applications of AlN thin films prepared by a helicon sputtering system

Thermal Transport at the AlN-SiC Interface and Grain Boundary of AlN

RF Reactive Sputtering AlN Thin Film at Room Temperature for CMOS-compatible MEMS Application