Abstract:A comprehensive spectroscopic study is reported for MOCVD (Metal organic chemical vapor deposition) grown AlN thin films prepared on sapphire (Al2O3) and 6H–SiC substrates. Impacts of substrate on the structural, surface and optical properties of AlN epilayers are meticulously appraised by using high resolution X-ray diffraction (HR-XRD), X-ray photoelectron spectroscopy (XPS), Raman scattering (RS), optical transmission (OT), spectroscopic ellipsometry (SE), photoluminescence (PL) and atomic force microscopy (AFM). Comparative results with different spectroscopic studies have revealed better crystalline quality of the AlN films grown on 6H–SiC than on Al2O3. For AlN/Al2O3 our extensive measurements have clearly uncovered a significant influence of the substrate on film’s surface roughness, dislocation density, grain size, micro strain and the incorporation of oxygen on its surface. Careful analysis of the temperature-dependent RS results have shown an appealing phenomena of the existing biaxial stress in AlN films altering from compressive to tensile stress as the temperature is increased from 80 K to 800 K. This effect exhibits higher temperature inflection point for AlN/Al2O3 film than AlN/6H–SiC.

What problem does this paper attempt to address?

This paper aims to evaluate the influence of substrates on the properties of aluminum nitride (AlN) epitaxial layers by comparing and studying the structural, surface and optical characteristics of AlN thin films grown by metal - organic chemical vapor deposition (MOCVD) on different substrates (sapphire \( \text{Al}_2\text{O}_3 \) and 6H silicon carbide \( 6H \text{SiC} \)). Specifically, the paper focuses on the following aspects: 1. **Crystal quality**: Analyze the crystal orientation and quality of the thin films, as well as the grain size and micro - strain by high - resolution X - ray diffraction (HR - XRD). 2. **Surface roughness**: Measure the surface morphology of the thin films, especially the roughness, using atomic force microscopy (AFM). 3. **Optical properties**: Study the optical properties of the thin films, such as band - gap energy, fluorescence emission peak position and intensity, etc., through techniques such as photoluminescence (PL), Raman scattering (RS), optical transmission (OT) and spectroscopic ellipsometry (SE). 4. **Stress change**: Study the stress change of AlN thin films at different temperatures, especially the transition point from compressive stress to tensile stress, through temperature - dependent Raman scattering experiments. The main objective of the paper is to reveal the specific influence of different substrates on the properties of AlN thin films, thereby providing theoretical basis and technical guidance for the preparation of high - performance AlN - based devices.

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

The optical properties and applications of AlN thin films prepared by a helicon sputtering system

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia

Influence of the Nucleation Layer Morphology on the Structural Property of AlN Films Grown on C-Plane Sapphire by MOCVD

Effects of AlN substrate orientation on crystalline quality of wurtzite GaN films investigated via molecular dynamics

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Photoluminescence Study of Epitaxial 4H-Sic Grown on AlN/Si ( 100 ) Complex Substrate by Chemical Vapor Deposition