Abstract:It is challenging to grow aluminum nitride (AlN) in c-axis orientation on a metal electrode, primarily due to lattice mismatch and the difference between the coefficients of thermal expansion. In this work, we investigate and optimize the effects of several process parameters such as plasma power, N2 flow concentration, quality of the bottom electrode, and oxygen content. The optimized deposition parameters are necessary for the growth of highly c-axis textured AlN thin film having a thickness of 300 nm on a Mo/SiO2/Si substrate. To this end, c-axis oriented AlN thin films were sputtered on a molybdenum (Mo) electrode at the low substrate temperature (300°C). The quality of the Mo electrode was optimized in terms of the surface roughness, interfacial energy, and full width at half maximum (FWHM) of x-ray diffraction (XRD) peak for facilitating the c-axis growth of the AIN film. Results indicate that the growth of AlN film in (002) orientation on the Mo electrode strongly depends on plasma power, the optimum value of which is found to be 300 W. Also, an extremely low FWHM of AlN (002) peak 0.62° is achieved at ∼ 38% N2 concentration. The oxygen content is also found to be an influential parameter, with a threshold value of 28% by atomic weight, beyond which amorphous growth of the AIN film is observed. The fabricated Mo-AlN-Mo structure has a dielectric constant of 8.89 and a capacitance value of 42 pF measured across the top electrode area of 400 × 400 μm2. The grown c-axis oriented AlN film can be used in applications such as the piezoelectric energy harvester (PEH) and the thin-film bulk acoustic resonator (FBAR).

Influence of the Nucleation Layer Morphology on the Structural Property of AlN Films Grown on C-Plane Sapphire by MOCVD

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Preparation of AIN Thin Film by DC Sputtering on SiO2/Si and Analysis of Microstructure

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

The role of AlN thickness in MOCVD growth of N-polar GaN

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Behaviours of the lattice-polarity inversion in the AlN growth on the c-Al2O3(0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition

Effects of Aln Nucleation Layer Thickness on Crystal Quality of Aln Grown by Plasma-Assisted Molecular Beam Epitaxy

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

The Effect of Al Interlayers on the Growth of AlN on Si Substrates by Metal Organic Chemical Vapor Deposition

Atomic Simulation of Homoepitaxial AlN on Non-Polar (11-20) Plane

Influence Of Metal Electrodes On C-Axis Orientation Of Aln Thin Films Deposited By Dc Magnetron Sputtering

Influence of Process Parameters and Formation of Highly c-Axis Oriented AlN Thin Films on Mo by Reactive Sputtering

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Substrate angle-induced fully c-axis orientation of AlN films deposited by off-normal DC sputtering method

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique