Abstract:Aluminum nitride (AlN) thin film/molybdenum (Mo) electrode structures are typically required in microelectromechanical system applications. However, the growth of highly crystalline and c-axis-oriented AlN thin films on Mo electrodes remains challenging. In this study, we demonstrate the epitaxial growth of AlN thin films on Mo electrode/sapphire (0001) substrates and examine the structural characteristics of Mo thin films to determine the reason contributing to the epitaxial growth of AlN thin films on Mo thin films formed on sapphire. Two differently oriented crystals are obtained from Mo thin films grown on sapphire substrates: (110)- and (111)-oriented crystals. The dominant (111)-oriented crystals are single-domain, and the recessive (110)-oriented crystals comprise three in-plane domains rotated by 120° with respect to each other. The highly ordered Mo thin films formed on sapphire substrates serve as templates for the epitaxial growth by transferring the crystallographic information of the sapphire substrates to the AlN thin films. Consequently, the out-of-plane and in-plane orientation relationships among the AlN thin films, Mo thin films, and sapphire substrates are successfully defined.

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

High-quality AlN Epitaxy on Sapphire Substrates with Sputtered Buffer Layers

Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy

Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy

Growth and Defects of AlN Epilayers by RF Molecular Beam Epitaxy

The In-Plane-Two-Folders Symmetric a-Plane AlN Epitaxy on r-Plane Sapphire Substrate

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

Formation mechanism of (10-13) AlN twins on m-plane sapphire substrates at high temperature by hydride vapor phase epitaxy

The In-Plane-Two-Folders Symmetric <i>a</i>-Plane AlN Epitaxy on <i>r</i>-Plane Sapphire Substrate

Structural Analysis of Mo Thin Films on Sapphire Substrates for Epitaxial Growth of AlN