Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

Structural Analysis of Mo Thin Films on Sapphire Substrates for Epitaxial Growth of AlN

Influence of Process Parameters and Formation of Highly c-Axis Oriented AlN Thin Films on Mo by Reactive Sputtering

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Sputter-grown two-dimensional α-MoO 3 thin films: Microstructure dependence on growth conditions

Unusual tilted growth and epitaxial relationship of NaCl B1-structured NiO and CrN on r-plane Al2O3

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Controlling Crystal Structure and Oxidation State in Molybdenum Nitrides Through Epitaxial Stabilization

Influence Of Metal Electrodes On C-Axis Orientation Of Aln Thin Films Deposited By Dc Magnetron Sputtering

Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

Epitaxial Growth of &Lt;010>-Oriented MoO2 Nanorods on M-Sapphire

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Epitaxial Growth and Physical Properties of Ternary Nitride Thin Films by Polymer-Assisted Deposition

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate