Abstract:NbNx layers were deposited by reactive magnetron sputtering on MgO(001) substrates in 0.67Pa pure N2 at Ts=600–1000°C. Ts≥800°C leads to epitaxial layers with a cube-on-cube relationship to the substrate: (001)NbN||(001)MgO and [100]NbN||[100]MgO. The layers are nearly stoichiometric with x=0.95–0.98 for Ts≤800°C, but become nitrogen deficient with x=0.81 and 0.91 for Ts=900 and 1000°C. X-ray diffraction reciprocal space maps indicate a small in-plane compressive strain of −0.0008±0.0004 for epitaxial layers, and a relaxed lattice constant that decreases from 4.372Å for x=0.81 to 4.363Å for x=0.98. This unexpected trend is attributed to increasing Nb and decreasing N vacancy concentrations, as quantified by first-principles calculations of the lattice parameter vs. point defect concentration, and consistent with the relatively small calculated formation energies for N and Nb vacancies of 1.00 and −0.67eV at 0K and −0.53 and 0.86eV at 1073K, respectively. The N-deficient NbN0.81(001) layer exhibits the highest crystalline quality with in-plane and out-of-plane x-ray coherence lengths of 4.5 and 13.8nm, attributed to a high Nb-adatom diffusion on an N-deficient growth front. However, it also contains inclusions of hexagonal NbN grains which lead to a relatively high measured hardness H=28.0±5.1GPa and elastic modulus E=406±70GPa. In contrast, the nearly stoichiometric phase-pure epitaxial cubic NbN0.98(001) layer has a H=17.8±0.7GPa and E=315±13GPa. The latter value is slightly smaller than 335 and 361GPa, the isotropic elastic modulus and the [100]-indentation modulus, respectively, predicted for NbN from the calculated c11=641GPa, c12=140GPa, and c44=78GPa. The electrical resistivity ranges from 171 to 437μΩcm at room temperature and 155–646μΩcm at 77K, suggesting carrier localization due to disorder from vacancies and crystalline defects.

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