Abstract:Aluminum nitride (AlN) thin films were reactively deposited onto glass substrates using reactive magnetron sputtering with a temperature-controllable heater. The phase and structure of the films were analyzed using X-ray diffraction (XRD). Nano-indenter and ellipsometer as well as grating spectrograph were employed to characterize hardness, elastic module, and optical properties of the films. The effects of substrate temperature on the structure and properties of the AlN films were intensely analyzed and studied. The results showed that the AlN films fabricated by this method were crystalline with a hexagonal structure. The deposition temperature influenced the preferred orientation of the films. It seemed that the plane (110) of AlN was more sensitive to temperature than the plane (100). The full width of half maximum (FWHM) of peak (100) decreased with increasing temperature, which indicated that the grain size became larger at higher temperature. Both the hardness and the elastic modulus of AlN films increased with the deposition temperature. A hardness of 8 GPa was obtained at 150°C while a 10 GPa one was achieved at 350°C. In the visible region AlN film was transparent, exhibiting a transmittance over 90%. As the deposition temperature increased, the refractive indices of the films increased, while the deposition rate decreased, according to the simulated thickness from the transmittance spectra and by the ellipsometer.

Fabrication and Characterization of Nbn, Aln and Nbn/Aln/Nbn on Mgo Substrates

Fabrication And Characterization Of Nbn/Aln/Nbn Junction On Mgo(001) And Aln/Nbn Bilayer On Mgo(111) Substrates

Fabrication of Aln Thin Films on Different Substrates at Ambient Temperature

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

AlN Thin Films Deposited on Different Si-based Substrates Through RF Magnetron Sputtering

Fabrication and Characterization of Aluminum Nitride Nanoparticles by RF Magnetron Sputtering and Inert Gas Condensation Technique

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

[Fabrication and Study of Sputtered NbN Thin Films].

Studies on the Effects of the Different Substrates on the Structures of AlN Thin Films

The AlN Layer Thickness Dependent Coherent Epitaxial Growth, Stress and Hardness in NbN/AlN Nanostructured Multilayer Films

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Effects of Substrate Temperature on Aluminum Nitride Films by Reactively Magnetron Sputtering

Growth of AlN Films on Silicon Substrates by Radio Frequency Magnetron Sputtering

AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

The study and fabrication of Al/AlN substrate

RF Reactive Sputtering AlN Thin Film at Room Temperature for CMOS-compatible MEMS Application

Characterisation of Aluminium Nitride Films and Surface Acoustic Wave Devices for Microfluidic Applications