Abstract:Preparing high-quality AlN films at low temperatures is always highly demanded in plenty of application-fields, despite the high temperature is always necessary to enable the AlN crystallization. Therefore, improving the structural properties at low temperature is still challenging in the field. In the present work, the metal organic chemical vapor deposition (MOCVD) grown AlN nucleation layer is employed to improve the crystallinity and morphology of sputtered AlN on 6-inch Si (111) substrate at the temperature even as low as 100°C where it is not principally possible to achieve the crystallization of sputtered AlN. When compared with the as-sputtered AlN prepared even at 650°C, it is found that the full width at half maximum (FWHM) of AlN (002) X-ray rocking curves is intensively decreased to 0.96° from 1.61°, and such a reduction indicates that the screw dislocation density is decreased from 7.31×1010 down to 2.14×1010/cm2. In addition to the crystallinity, the morphology is also obviously improved that the root-mean-square (RMS) roughness is reduced from 4.99 nm down to 0.83 nm in a scanned area of 3×3 μm2 through introducing AlN nucleation. Therefore, such a combination highlights the contribution of AlN nucleation grown by MOCVD in improving the structural properties of low-temperature sputtered AlN layer which is compatible with the manufacturing of Si integrated circuits.

Fabrication of Aln Thin Films on Different Substrates at Ambient Temperature

Preparation of AIN Thin Film by DC Sputtering on SiO2/Si and Analysis of Microstructure

Fabrication and Characterization of Nbn, Aln and Nbn/Aln/Nbn on Mgo Substrates

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

Characterisation of Aluminium Nitride Films and Surface Acoustic Wave Devices for Microfluidic Applications

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Preparation and Properties of C-axis Preferred Orientation AlN Thin Films by Pure Nitrogen Reactive Sputtering

RF Reactive Sputtering AlN Thin Film at Room Temperature for CMOS-compatible MEMS Application

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Preparation of Aln Films by Pulsed Laser Deposition Using Sintered Aluminum Nitride and Elemental Aluminum As Raw Materials

Ultra-violet Light Assisted Reactive RF Magnetron Sputtering Deposition of AlN Thin Films at Room Temperature

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

The optical properties and applications of AlN thin films prepared by a helicon sputtering system

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

Low Temperature Growth of Reactive Partially Ionized Beam Deposited AlN Films

Low-temperature Synthesis of AlN Films Through Electron Cyclotron Resonance Plasma-Aided Reactive Pulsed Laser Deposition

Deposition of AIN Thin Films on Silicon by DC Magnetron Reactive Sputtering