Abstract:It is challenging to grow aluminum nitride (AlN) in c-axis orientation on a metal electrode, primarily due to lattice mismatch and the difference between the coefficients of thermal expansion. In this work, we investigate and optimize the effects of several process parameters such as plasma power, N2 flow concentration, quality of the bottom electrode, and oxygen content. The optimized deposition parameters are necessary for the growth of highly c-axis textured AlN thin film having a thickness of 300 nm on a Mo/SiO2/Si substrate. To this end, c-axis oriented AlN thin films were sputtered on a molybdenum (Mo) electrode at the low substrate temperature (300°C). The quality of the Mo electrode was optimized in terms of the surface roughness, interfacial energy, and full width at half maximum (FWHM) of x-ray diffraction (XRD) peak for facilitating the c-axis growth of the AIN film. Results indicate that the growth of AlN film in (002) orientation on the Mo electrode strongly depends on plasma power, the optimum value of which is found to be 300 W. Also, an extremely low FWHM of AlN (002) peak 0.62° is achieved at ∼ 38% N2 concentration. The oxygen content is also found to be an influential parameter, with a threshold value of 28% by atomic weight, beyond which amorphous growth of the AIN film is observed. The fabricated Mo-AlN-Mo structure has a dielectric constant of 8.89 and a capacitance value of 42 pF measured across the top electrode area of 400 × 400 μm2. The grown c-axis oriented AlN film can be used in applications such as the piezoelectric energy harvester (PEH) and the thin-film bulk acoustic resonator (FBAR).

Preparation and Properties of C-axis Preferred Orientation AlN Thin Films by Pure Nitrogen Reactive Sputtering

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Preparation of AIN Thin Film by DC Sputtering on SiO2/Si and Analysis of Microstructure

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Preparation Technique Of Aln Piezoelectric Thin Film

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Study of preparation of AlN Thin Films for FBAR Application by RF Sputtering

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Substrate angle-induced fully c-axis orientation of AlN films deposited by off-normal DC sputtering method

Deposition of AIN Thin Films on Silicon by DC Magnetron Reactive Sputtering

Review on Deposition of C-Axis Oriented AlN Films by Reactive Magnetron Sputtering

Low Temperature Growth of Reactive Partially Ionized Beam Deposited AlN Films

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

The optical properties and applications of AlN thin films prepared by a helicon sputtering system

Influence of Process Parameters and Formation of Highly c-Axis Oriented AlN Thin Films on Mo by Reactive Sputtering

Low-temperature Synthesis of AlN Films Through Electron Cyclotron Resonance Plasma-Aided Reactive Pulsed Laser Deposition

Low temperature aluminum nitride thin films for sensory applications

Preparation of Aln Films by Pulsed Laser Deposition Using Sintered Aluminum Nitride and Elemental Aluminum As Raw Materials

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

An Investigation of the Structural and Surface Topography of Aluminum Nitride Thin Films Deposited at Low Sputtering Power for Piezoelectric Applications