Abstract:Aluminum nitride films have been prepared on Si (100) substrates through two methods: basic pulsed laser deposition from sintered aluminum nitride ceramics and plasma-aided reactive pulsed laser deposition from elemental aluminum metal. The latter was performed in a nitrogen plasma environment generated from electron cyclotron resonance microwave discharge. The films deposited by both methods have been characterized by various techniques to examine the morphology and to determine the composition and structure. The formation of aluminum nitride compound was confirmed in the deposited films. The films prepared by basic pulsed laser deposition are found to contain oxygen impurities, while those obtained through the plasma aided method have exhibited a stoichiometric AlN composition. The films have shown better crystalline quality when prepared at higher temperatures, however, when aided by the nitrogen plasma the films contain pure AlN compound with much better crystalline quality even prepared at low temperatures. Mechanisms relevant to the deposition processes are also discussed with particular emphasis on the contributions of the nitrogen plasma to the film formation. A comparison of the different characteristic features associated with the films prepared by the two methods shows that the plasma aided method has reasonable advantages in preparing compound films.

Deposition of AIN Thin Films on Silicon by DC Magnetron Reactive Sputtering

Preparation of AIN Thin Film by DC Sputtering on SiO2/Si and Analysis of Microstructure

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Review on Deposition of C-Axis Oriented AlN Films by Reactive Magnetron Sputtering

Preparation Technique Of Aln Piezoelectric Thin Film

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Influence Of Metal Electrodes On C-Axis Orientation Of Aln Thin Films Deposited By Dc Magnetron Sputtering

Preparation and Properties of C-axis Preferred Orientation AlN Thin Films by Pure Nitrogen Reactive Sputtering

Study of preparation of AlN Thin Films for FBAR Application by RF Sputtering

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive DC magnetron sputtering

Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering

Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Study On the Uniformity Aluminum Nitrate Thin Film On 2-Inch Silicon Substrate Prepared by RF Magnetron Sputtering

Reactive Partially Ionized Beam Deposition of Aln Thin Films

Preparation of Aln Films by Pulsed Laser Deposition Using Sintered Aluminum Nitride and Elemental Aluminum As Raw Materials

Structural and Mechanical Properties of AlN Films by Pulsed Bias Arc Ion Plating

Substrate angle-induced fully c-axis orientation of AlN films deposited by off-normal DC sputtering method

Properties and morphology of TiN films deposited by atomic layer deposition