Preparation Technique Of Aln Piezoelectric Thin Film

Guanbo Yin,S. Imran,Yungui Ma

2014-01-01

Abstract:AlN piezoelectric thin films were prepared by DC magnetron reactive sputtering. A good c-axis orientation is essential for obtaining high piezoelectric coefficients. Therefore, the experiments were designed about the four parameters of the sputtering power, volume ratio of N-2 and Ar, gas pressure, and substrate temperature, in order to make sure the deposition parameters of the c-axis orientation AlN film. The crystal structure and full width at half maximum (FWHM) of the thin films were analyzed by X-ray diffraction (XRD). The results show that the optimal process parameters were the sputtering power of 200 W, volume ratio of N-2 and Ar of 2 : 8, gas pressure of 3.75 mT. The results provide the experiment evidence and process base for the next study.