Abstract:Many technologies require highly-oriented and textured functional thin films. The most common synthe-sis approaches use on-axis sputter geometries. However, in some scenarios, on-axis sputtering is not feasible. During ionized physical vapor deposition (PVD), in contrast to conventional PVD, the film-forming species can be accelerated onto the growing film using substrate-bias potentials. This increas-es the ad-atom mobility, but also deflects the trajectory of ions towards the substrate increasing the texture of the growing film. However, potential gas-ion incorporation in the films limits the feasibility of such approaches for the deposition of defect-sensitive materials. In this work, we report on the oblique-angle deposition of highly c-axis oriented AlN (0002) films, enabled by reactive metal-ion syn-chronized HiPIMS. The effect of critical deposition parameters, such as the magnetic configuration, ion kinetic energies and substrate biasing are investigated. The films deposited using HiPIMS show a more pronounced texture and orientation compared to DCMS films. We find that combining the HiPIMS dep-ositions with a moderate substrate bias of -30 V is sufficient to improve the crystalline quality and tex-ture of the films significantly. To reduce process-gas incorporation, and the formation of point defects, the negative substrate-bias potential is synchronized to the Al-rich fraction of each HiPIMS pulse. This leads to reduced Ar-Ion incorporation and improves the structural properties. The films also show uni-form polarization of the grains making this synthesis route suitable for piezoelectric applications. While the compressive stress in the films is still high, the results demonstrate, that synchronized HiPIMS can yield promising results for the synthesis under oblique-angle deposition conditions - even with low substrate-bias potentials.

Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering

Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive DC magnetron sputtering

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Preparation Technique Of Aln Piezoelectric Thin Film

Flexible Surface Acoustic Wave Device with Aln Film on Polymer Substrate

Preparation of AIN Thin Film by DC Sputtering on SiO2/Si and Analysis of Microstructure

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Study on optimizing c-axis oriented AlN thin film for piezoelectric sensing applications controlling the sputtering process parameters

Review on Deposition of C-Axis Oriented AlN Films by Reactive Magnetron Sputtering

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Influence Of Metal Electrodes On C-Axis Orientation Of Aln Thin Films Deposited By Dc Magnetron Sputtering

Study on c-axis orientation of AlN thin film on the influence Al buffer layer and Ar/N2 gas flow ratio in reactive magnetron sputtering

Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

Enhancement of c-Axis Oriented Aluminum Nitride Films via Low Temperature DC Sputtering

An Investigation of the Structural and Surface Topography of Aluminum Nitride Thin Films Deposited at Low Sputtering Power for Piezoelectric Applications

Study of preparation of AlN Thin Films for FBAR Application by RF Sputtering

Influence of Process Parameters and Formation of Highly c-Axis Oriented AlN Thin Films on Mo by Reactive Sputtering

Deposition of AIN Thin Films on Silicon by DC Magnetron Reactive Sputtering

Improving the crystallinity and texture of oblique-angle-deposited AlN thin films using reactive synchronized HiPIMS

Preparation and Properties of C-axis Preferred Orientation AlN Thin Films by Pure Nitrogen Reactive Sputtering

Growth and Characterization of Polyimide-Supported AlN Films for Flexible Surface Acoustic Wave Devices