Abstract:Aluminum nitride (AlN) thin film has considerable properties, which makes it advantages for a variety of applications. AlN films were prepared by remote plasma atomic layer deposition (RP-ALD) with the growth temperature of 100 to 450 °C. The properties of AlN films with various growth temperatures were studied systematically. In addition, AlN/GaN layers deposited on sapphire (Al 2 O 3 ) substrates were also investigated. The AlN/GaN interfaces and AlN/Al 2 O 3 interfaces characteristics were analyzed. The optical property of GaN films prepared on sapphire substrates with and without AlN buffer layer were identified by photoluminescence measurement. The experiment result shows that crystal AlN films became to present at 250 °C with a hexagonal wurtzite structure. X-ray photoelectron spectroscopy investigation shows that AlN films contain Al-O, Al-O-N complexes and Al-Al metallic aluminum bonds except the main Al-N bond confirmed by high resolution Al 2p and N 1s spectra. High-resolution transmission electron microscopy measurement reveals sharp interfaces of AlN/Al 2 O 3 and AlN/GaN. The obtained lowest lattice mismatch of AlN/Al 2 O 3 and AlN/GaN are 11.0% and 2.1%, respectively. Photoluminescence measurement further confirms that AlN buffer layer enhances the quality of GaN grown on sapphire substrates. High quality AlN/GaN layers prepared by RP-ALD provides a promising pathway towards high quality GaN-based devices.

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Preparation of AIN Thin Film by DC Sputtering on SiO2/Si and Analysis of Microstructure

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

Low Temperature Growth of Reactive Partially Ionized Beam Deposited AlN Films

Preparation and Properties of C-axis Preferred Orientation AlN Thin Films by Pure Nitrogen Reactive Sputtering

Study of preparation of AlN Thin Films for FBAR Application by RF Sputtering

Ultra-violet Light Assisted Reactive RF Magnetron Sputtering Deposition of AlN Thin Films at Room Temperature

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Low-temperature Synthesis of AlN Films Through Electron Cyclotron Resonance Plasma-Aided Reactive Pulsed Laser Deposition

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Low-Temperature Deposition of AlN Films\+*

Low temperature aluminum nitride thin films for sensory applications

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Effect of substrate temperature and bias voltage on the properties in DC magnetron sputtered AlN films on glass substrates

Properties of Aluminum Nitride Thin Films Grown by Radio Frequency Magnetron Sputtering Using A1N Target

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

High-quality AlN growth: a detailed study on ammonia flow

High temperature lattice structure evolution of C-axis preferred orientation AlN thin films and its application in temperature measurement