Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

Muhammad Iznul Hisyam,Ahmad Shuhaimi,Rizuan Norhaniza,Marwan Mansor,Adam Williams,Mohd Rofei Mat Hussin

DOI: https://doi.org/10.3390/cryst14040371

IF: 2.7

2024-04-17

Crystals

Abstract:A dense and smooth aluminium nitride thin film grown on a silicon (111) substrates using pulsed metal–organic chemical vapor deposition is presented. The influence of the pulsed cycle numbers on the surface morphology and crystalline quality of the aluminium nitride films are discussed in detail. It was found that 70 cycle numbers produced the most optimized aluminium nitride films. Field emission scanning electron microscopy and atomic force microscopy images show a dense and smooth morphology with a root-mean-square-roughness of 2.13 nm. The narrowest FWHM of the X-ray rocking curve for the AlN 0002 and 10–12 reflections are 2756 arcsec and 3450 arcsec, respectively. Furthermore, reciprocal space mapping reveals an in-plane tensile strain of 0.28%, which was induced by the heteroepitaxial growth on the silicon (111) substrate. This work provides an alternative approach to grow aluminium nitride for possible application in optoelectronic and power devices.

materials science, multidisciplinary,crystallography

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the influence of different numbers of pulse cycles on the surface morphology, crystal quality and strain characteristics when growing high - quality aluminum nitride (AlN) thin films on silicon (111) substrates using pulsed metal - organic chemical vapor deposition (PMOCVD) technology. Specifically, the researchers hope to optimize the growth conditions of AlN thin films by adjusting the number of pulse cycles to obtain more compact, smoother and better - quality AlN thin films, thus providing possible solutions for the applications of optoelectronic and power devices. The paper mentions that although there have been some studies on the pulsed - flow method, the systematic study of the relationship between the number of pulse cycles and the morphological and structural characteristics of AlN - on - Si(111) thin films is still insufficient. Therefore, this study aims to systematically explore the influence of different numbers of PMOCVD cycles on the surface morphology, structure and strain properties of AlN - on - Si(111) thin films through experiments, in order to find the optimal growth parameters. The main contribution of this study is to provide a new method for growing high - quality AlN thin films on silicon (111) substrates, which is of great significance for improving the performance of subsequent devices.

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Growth Evolution Of Aln Films On Silicon (111) Substrates By Pulsed Laser Deposition

Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates

Homogeneous Epitaxial Growth of AlN Single-Crystalline Films on 2 Inch-Diameter Si (111) Substrates by Pulsed Laser Deposition

High-quality AlN growth: a detailed study on ammonia flow

Epitaxial Growth of High Quality AlN Films on Si Substrates

AlN Thin Films Deposited on Different Si-based Substrates Through RF Magnetron Sputtering

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Nucleation Layer Design for Growth of a High-Quality AlN Epitaxial Film on a Si(111) Substrate

Epitaxial growth of high-quality AlN films on metallic nickel substrates by pulsed laser deposition

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Growth of High-Quality AlN Epitaxial Film by Optimizing the Si Substrate Surface

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Surface Preparation and Homoepitaxial Deposition of AlN on (0001)-Oriented AlN Substrates by Metalorganic Chemical Vapor Deposition

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism

The Effect of Al Interlayers on the Growth of AlN on Si Substrates by Metal Organic Chemical Vapor Deposition

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE