Abstract:We have investigated the growth of AlN films on hexagonal nano-concave-circle patterned Si substrates using metal–organic chemical vapor deposition. By depositing a thin AlN seed layer on the Si substrate before the pattern process, a high quality AlN film with a thickness of 2 μm has been obtained. The full width at half maximum values of X-ray diffraction rocking curves are as low as 409 and 677 arc sec for AlN (002) and (102) planes, respectively. Further experimental results indicate that the AlN seed layer can suppress the misorientation of the adjacent grains, as revealed by the lower twist and tilt angles of the mosaic structure, and thus only a few dislocations generated during the grain coalescence. In addition, the migration of Al adatoms is enhanced on the Al terminated surface of the AlN seed layer, which accelerates the coalescence process. All these improvements are attributed to the lower binding energy and diffusion barrier for Al adatoms on the Al terminated surface than that on the Si surface. Our results demonstrate an effective approach to obtain high quality AlN films for high performance ultraviolet light-emitting diodes on the Si substrate.

Interfacial Properties of AlN/Si (111) Grown by Metal-Organic Chemical Vapour Deposition

Microstructures of Algan/Aln/Si (111) Grown by Metalorganic Chemical Vapor Deposition

Chemical Structures Of Algan/Aln/Si (111) By Mocvd Using Aes And Xps

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Study on the AlN/Si(111) interface properties

The Effect of Al Interlayers on the Growth of AlN on Si Substrates by Metal Organic Chemical Vapor Deposition

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

Study on the AlN/Si Interface Properties

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

The structure and electronic properties of AlN/SrTiO3 (1 1 1) interfaces

Atomistic modeling of diffusion processes at Al(Si)/Si(111) interphase boundaries obtained by vapor deposition

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

〈0001〉-oriented growth of AlN films on Si(111) by microwave plasma CVD with AlBr3NH3N2 system

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Influence of Al Interlayer on the Growth of AlN on Si(111) Substrate