Abstract:The alloy AlxGa1−xN was grown by metal-organic chemical vapor deposition (MOCVD) using a high-temperature AlN interlayer on a thick GaN template. The Al composition (x) of the AlxGa1−xN was varied in the range 0.13⩽x⩽0.8. The in-situ reflectance spectra indicate that the growth process of AlGaN alloys is dominated by trimethylgallium (TMGa) molar flux when the molar flux of trimethylaluminium (TMAl) is kept constant. The Al compositions and growth rates of AlGaN alloys were determined by Rutherford backscattering, which indicates that the incorporation efficiency of TMAl is improved remarkably by decreasing the TMGa molar flux. The crystalline quality of these AlGaN alloys is evaluated by measuring the symmetric (002) and asymmetric (102) ω-scan X-ray diffraction peak widths. The best crystalline quality, among these AlxGa1−xN alloys, is for an Al composition of x=0.54 where the full-width at half-maximums of the AlGaN (002) and (102) diffraction peaks are 265 and 797arcsec, respectively. This conclusion is consistent with the surface morphology of the AlGaN alloys probed by atomic force microscopy. Room temperature cathodoluminescence spectra show pronounced near band edge emission from these AlGaN alloys. The optical band gaps (Eg) are found to deviate from linear interpolation between EgGaN and EgAlN with a bowing parameter b=0.89.

Microstructures of Algan/Aln/Si (111) Grown by Metalorganic Chemical Vapor Deposition

Chemical Structures Of Algan/Aln/Si (111) By Mocvd Using Aes And Xps

Interfacial Properties of AlN/Si (111) Grown by Metal-Organic Chemical Vapour Deposition

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Morphology Evolution, Growth Mechanism and Optical Properties of AlN Nanostructures

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

Morphology-controlled synthesis and structural characterization of ternary AlxGa1−xN nanostructures by chemical vapor deposition

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Growth of GaN on Si(111) by inserting δAl/AlN buffer layer

XPS Study of Impurities in Si‐doped AlN Film

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Characteristics of High Al Content AlxGa1−xN Grown by Metalorganic Chemical Vapor Deposition

Metalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

AlN Thin Films Deposited on Different Si-based Substrates Through RF Magnetron Sputtering