Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

ZiLi Xie,Rong Zhang,RuoLian Jiang,Bin Liu,HaiMei Gong,XiangQian Xiu,Peng Chen,Hai Lu,Ping Han,Yi Shi,YouDou Zheng

DOI: https://doi.org/10.1007/s11431-008-0201-y

2008-01-01

Abstract:AlN/Al0.3Ga0.7N superlattices were grown on (0001) sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The superlattice period varies from 6 to 30. The layer thickness of different period stack was designed. GaN or AlGaN template was employed for growing AlN/AlGaN superlattices. Reflectivity, SEM, AFM and XRD data of the Al (x) Ga1-x N/AlN superlattices are presented. It is found that the templates used have an intensive impact on surface roughness and interfacial properties of following AlN/AlGaN superlattices. The result of atomic force microscopy indicates that AlN/AlGaN superlattices grown on GaN template exhibit quasi-two-dimensional growth mode. The resulting superlattice has a smooth surface morphology and distinct interface. No crack is observed in the area of a 2-inch wafer.