Abstract:Silicon carbide (SiC) and aluminum nitride (AlN) thin films have been grown on 6HSiC(0001) substrates by gas-source molecular beam epitaxy (GSMBE) at 1050°C. Step flow, step bunching and the deposition of 6HSiC occurred at the outset of the exposure of the (1 × 1) vicinal substrate surface to C 2 H 4 Si 2 H 6 gas flow ratios of 1, 2 and 10. Subsequent deposition resulted in step flow and continued growth of 6H films or formation and coalescence of 3CSiC islands using the gas flow ratio of one or the ethylene-rich ratios, respectively. The (3 × 3) surface reconstruction observed using the former ratio is believed to enhance the diffusion lengths of the adatoms, which in turn promotes step flow growth. Essentially atomically flat monocrystalline AlN surfaces were obtained using on-axis substrates. Island-like features were observed on the vicinal surface. The coalescence of the latter features at steps gave rise to inversion domain boundaries (IDBs) as a result of the misalignment of the Si C bilayer steps with the AlN bilayers in the growing film. The quality of thicker AlN films is strongly influenced by the concentration of IDBs. Undoped, highly resistive (102 Ω · cm) and Mg-doped, p-type (0.3 Ω · cm) monocrystalline GaN films having a thickness of 0.4–0.5 μm have also been grown via the same technique on AlN buffer layers without post-processing annealing.

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Photoluminescence Study of Epitaxial 4H-Sic Grown on AlN/Si ( 100 ) Complex Substrate by Chemical Vapor Deposition

Room-temperature Photoluminescence of Doped 4H-Sic Film Grown on AlN/Si(100)

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

The Growth of Si on Sic Complex Substrate by Cvd

Kick-out Diffusion of Al in 4H-Sic: an Ab Initio Study

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

Single-crystalline 6H-Sic Heteroepitaxial Growth by Chemical Vapor Deposition on Sapphire Substrates at Reduced Temperatures

Transition Between Amorphous and Crystalline Phases of SiC Deposited on Si Substrate Using H3SiCH3

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Growth of SiC Buffers for Strained Si Film Epitaxy

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on Sic (0001) Substrates

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Interfacial Properties of AlN/Si (111) Grown by Metal-Organic Chemical Vapour Deposition

The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer