Abstract:In this paper we present results on the growth of low-doped thick epitaxial layers on 4° off-oriented 4H-SiC using a warm-wall multi-wafer CVD system (Aixtron VP2800WW). Statistical data on doping and thickness of 25 μm to 40 μm layer growth show results similar to standard epilayer growth (5-15 μm). Improvements in thickness and doping uniformity as well as the reduction of epitaxial defects has boosted the quality of 25 μm to 40 μm thick epilayers. Laser light scattering measurements resulted in projected device yields with median values of 83% and 96% for 5×5 mm 2 and 2×2 mm 2 die size, respectively. This corresponds to a low epitaxial defect density of < 0.75 cm -2 in 25-40 μm thick epilayers. This paper also presents results of 60 μm to 150 μm thick epitaxial layer growth. Excellent results for doping, thickness and carrier lifetime were achieved. As an example results of a fully loaded 10×100mm run with 150 μm thick epilayers are presented. Wafer-to-wafer doping and thickness values of 3.7 % and 3.4% for sigma/mean were accomplished, respectively. Typical average lifetime values of 5 μs to 6 μs were measured on the 150 μm thick layers without post-epi treatments.

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Single step silicon carbide heteroepitaxy on a silicon wafer at reduced temperature

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

The Growth of Si on Sic Complex Substrate by Cvd

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Single-crystalline 6H-Sic Heteroepitaxial Growth by Chemical Vapor Deposition on Sapphire Substrates at Reduced Temperatures

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

300mm Cold-Wall UHV/CVD Reactor for Low-Temperature Epitaxial (100) Silicon

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Uniformity Investigation in 3C-Sic Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

Growth of SiC Buffers for Strained Si Film Epitaxy

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

10 × 100 Mm 4H-Sic Epitaxial Growth by Warm-Wall Planetary Reactor