Abstract:The epitaxial deposition of a 3C-SiC film on a (100) Si substrate has been achieved at low temperature in one step using the microwave plasma CVD technique. A high density of defects such as misfit dislocations, stacking faults (SF) and twin boundaries (TB) is generated in the film. Defect-induced strain distribution in the 3C-SiC film is analyzed by the geometric phase analysis (GPA) method combined with X-ray diffraction (XRD) and Raman spectroscopy. The strain analysis at an atomic level reveals that periodical misfit dislocations at the interface generate high local compressive strain (>20%) around the core of the dislocations in the SiC film, relaxing the major part of the intrinsic strain. A highly compressive interfacial layer is found to form between the SiC film and Si substrate regardless of the carbonization temperature. This interfacial layer is linked with the carbonization step of the film growth process. In addition, twins and stacking faults provide a complementary route for strain relaxation during the film growth process. It is found that more strain is accommodated at the matrix/twin interface during twin nucleation rather than that at the growth stage. The atomic understanding of the effects of crystalline defects on strain relaxation will provide important implications for the control of defects in SiC films and design of high-performance SiC devices.

Growth of SiC Buffers for Strained Si Film Epitaxy

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Effect of the Thickness of the Strained Si on Hall Mobility

The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer

High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Strain Reducing in 3C-Sic Film Growth on Si Substrate

The Growth of Si on Sic Complex Substrate by Cvd

Growth of 3C-Sic Films on On-axis 6H-Sic Substrates by LPCVD

Growth of Strained Si1-xGex Layer by UV/UHV/CVD

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Strained Layer Instabilities on Vicinal Surfaces: Ge0.8Si0.2 Epitaxy on Laser Textured Si(001)

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

XRD and SIMS analysis of single crystal SiC films grown on sapphire

Research on Growth Technology of Β-Sic Thin Films Epitaxial Grown on Si Substrates

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

Defect-Induced Strain Relaxation in 3C-Sic Films Grown on A (100) Si Substrate at Low Temperature in One Step

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Heteroepitaxial Growth of 3C-Sic on Si (111) Substrate Using AlN As a Buffer Layer

Growth of 3C-Sic on Si(100) by LPCVD Using a Modified Process after the Clean Step