Abstract:Using in situ scanning tunneling microscopy and low-energy electron diffraction, we performed investigations on the growth of zirconium silicide on vicinal and flat Si(111)-7 x 7 surfaces. In the case of a solid-phase reaction, submonolayer zirconium deposition onto vicinal Si followed by successive annealing results in the formation of zirconium silicide nanostructures, which are distributed randomly on the surface. These nanostructures evolved into rod-shaped islands with axes running along the substrate <(1) over bar 10 > directions at the late stage of the coarsening process. When 2-3 monolayers of Zr are deposited on Si at 520 degrees C, an extended network with rod-like silicide domains was developed, which is controlled by the elastic strain-relief mechanism. The atomic structures of these silicide features were identified and they are considered to adopt C49 ZrSi2. The reaction and growth on a flat surface with less Zr coverage at higher temperatures led to the formation of longer and narrower nanowires. The relations between the variety of nanostructures and the different growth conditions are addressed.

Growth of Single Crystalline 4H-Sic Film by Pyrogenation of PS/OCS/Si(111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Growth of Crystalline SiC Film Free of Cavities by Heating PS/silica Sol-Gel Coatings on Si (111) Substrate

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Growth of SiC Buffers for Strained Si Film Epitaxy

Photoemission Study of Β-Sic Growth by a Polyimide Langmuir–Blodgett Film on Silicon

Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

All-epitaxial Growth of Single-Crystalline Ba0.6Sr0.4TiO3/Ir/MgO/Si Heterostructures

Photoluminescence Study of Epitaxial 4H-Sic Grown on AlN/Si ( 100 ) Complex Substrate by Chemical Vapor Deposition

The Growth of Si on Sic Complex Substrate by Cvd