Abstract:This work focuses on the development and characterization of device quality thin-film crystalline silicon layers directly onto low-temperature glass. The material requirements and crystallographic quality necessary for high-performance device fabrication are studied and discussed. The processing technique investigated is aluminum-induced crystallization (AIC) of sputtered amorphous silicon on Al-coated glass substrates. Electron and ion beam microscopy are employed to study the crystallization process and the structure of the continuous polycrystalline silicon layer. The formation of this layer is accompanied by the juxtaposed layers of Al and Si films exchanging places during annealing. The grain sizes of the poly-Si material are many times larger than the film's thickness. Raman and thin-film X-ray diffraction measurements verify the good crystalline quality of the Si layers. The electrical properties are investigated by temperature dependent Hall effect measurements. They show that the electrical transport is governed by the properties within the crystallites rather than the grain boundaries. The specific advantages of AIC are: (1) its simplicity and industrial relevance, particularly for the processes of sputter deposition and thermal evaporation, (2) it requires only low-temperature processing at 500/spl deg/C, (3) its short processing times, and (4) its ability to produce polycrystalline material with good crystallographic and electrical properties. These advantages make the poly-Si material formed by AIC highly interesting and suitable for subsequent device fabrication such as for poly-Si thin-film solar cells.

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Study on amorphous silicon thin film by aluminum-induced crystallization

Preparation Of Poly-Slicon Thin Film By Aluminum Induced Crystallization Based On Al-Salt Solution

Influence of Precursor A-Si:H Dehydrogenation on the Aluminum Induced Crystallization Process

Aluminum Induced Lateral Crystallization of Amorphous Silicon Thin Films

Optimization of Material Structure of Ploy-Si Thin Film Based on Al Induced Crystallization

Study on the properties of nanocrystalline silicon formed by aluminum-induced crystallization at low temperature

Aluminum-Assisted Crystallization and P-Type Doping of Polycrystalline Si

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

Study on Performance of P-Si Thin Film Fabricated by Aluminum Induced Lateral Crystallization at Low Temperature

Polycrystalline silicon thin films on glass by aluminum-induced crystallization

Research on the Phase and Optical Properties of Nc-Si Films Prepared by Low Temperature Aluminum Induced Crystallization

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

Effect of oxide layer on Al-induced crystallization of amorphous Si1−xGex thin films

Low Loss Single Crystalline Aluminum Films Obtained on Si (1 1 1) Through Interfacial Modulation

Low-temperature Deposition of Highly Crystallized Silicon Films on Al-coated Polyethylene Napthalate by Inductively Coupled Plasma CVD

AlCl3-induced Crystallization of Amorphous Silicon Thin Films

Study on the Initial Growth Process of Crystalline Silicon Films on Aluminum-Coated Polyethylene Napthalate by Raman Spectroscopy

Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition

Low Temperature Polycrystalline Silicon Film Formation by Metal Induced Crystallization with Nickel Salt Derived by Ultrasonic Spray Pyrolysis