Abstract:Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm−1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

Low Loss Single Crystalline Aluminum Films Obtained on Si (1 1 1) Through Interfacial Modulation

Interface Engineering and Epitaxial Growth of Single‐Crystalline Aluminum Films on Semiconductors

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Interfacial Modulation On Single-Crystalline Aluminum Films Grown On Gaas By Eras Insertion

Two-Dimensional Growth Of Al Films On Si(111)-7 X 7 At Low-Temperature

Two-dimensional Growth of Al Films on Si(1 1 1)-7 × 7 at Low-Temperature

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

Growing Extremely Thin Bulklike Metal Film on a Semiconductor Surface: Monolayer Al(111) on Si(111)

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

Molecular Beam Epitaxy of Single-Crystalline Aluminum Film for Low Threshold Ultraviolet Plasmonic Nanolasers

Epitaxial growth and characterization of high-quality aluminum films on sapphire substrates by molecular beam epitaxy

Aluminum Induced Lateral Crystallization of Amorphous Silicon Thin Films

Room-Temperature Growth of Al Films on Si(111)-7 7 Surface

Impact of Alumina Coatings on Aluminum-Induced Crystallization of Polycrystalline Silicon Films

Room-Temperature Growth Of Al Films On Si(111)-7x7 Surface

Deposition and Growth Mechanism of Low-Temperature Crystalline Silicon Films on Inexpensive Substrates

Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

Improved Crystallinity of Ultra-Thin Amorphous Film by 2D-Limited Regrowth: Process and Characterization