Abstract:There are many two-dimensional superconductors, but only now have monolayers of metallic atoms shown superconductivity. Grown on silicon substrates, epitaxial films of lead and indium represent the thinnest superconductors possible. The two-dimensional (2D) superconducting state is a fragile state of matter susceptible to quantum phase fluctuations. Although superconductivity has been observed in ultrathin metal films down to a few layers1,2,3,4,5,6,7,8,9,10, it is still not known whether a single layer of ordered metal atoms, which represents the ultimate 2D limit of a crystalline film, could be superconducting. Here we report scanning tunnelling microscopy measurements on single atomic layers of Pb and In grown epitaxially on Si(111) substrate, and demonstrate unambiguously that superconductivity does exist at such a 2D extreme. The film shows a superconducting transition temperature of 1.83 K for an atom areal density n=10.44 Pb atoms nm−2, 1.52 K for n=9.40 Pb atoms nm−2 and 3.18 K for n=9.40 In atoms nm−2, respectively. We confirm the occurrence of superconductivity by the presence of superconducting vortices under magnetic field. In situ angle-resolved photoemission spectroscopy measurements reveal that the observed superconductivity is due to the interplay between the Pb–Pb (In–In) metallic and the Pb–Si (In–Si) covalent bondings.

Growing Extremely Thin Bulklike Metal Film on a Semiconductor Surface: Monolayer Al(111) on Si(111)

Two-Dimensional Growth Of Al Films On Si(111)-7 X 7 At Low-Temperature

Two-dimensional Growth of Al Films on Si(1 1 1)-7 × 7 at Low-Temperature

Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111)

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

Quantum Size Effect Induced Dilute Atomic Layers in Ultrathin Al Films

Reducing the Critical Thickness of Epitaxial Ag Film on the Si(111) Substrate by Introducing a Monolayer Al Buffer Layer

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Room-Temperature Growth of Al Films on Si(111)-7 7 Surface

Room-Temperature Growth Of Al Films On Si(111)-7x7 Surface

Low Loss Single Crystalline Aluminum Films Obtained on Si (1 1 1) Through Interfacial Modulation

Catalystlike Behavior of Si Adatoms in the Growth of Monolayer Al Film on Si(111)

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Interaction of Surface and Interface Plasmons in Extremely Thin Al Films on Si(111)

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

GROWTH AND STABILITY OF ULTRA-THIN Pb FILMS ON Pb/Si(111)-α-√3 × √3

Superconductivity in One-Atomic-layer Metal Films Grown on Si(111)

"Electronic Growth" of Metallic Overlayers on Semiconductor Substrates